FMS 2014: HGST Claims 3 Million IOPS and 1.5us Access Time SSD - updated with pics
Subject: General Tech, Storage, Shows and Expos | August 7, 2014 - 02:17 PM | Scott Michaud
Tagged: ssd, phase change memory, PCM, hgst, FMS 2014, FMS
According to an HGST press release, the company will bring an SSD based on phase change memory to the 2014 Flash Memory Summit in Santa Clara, California. They claim that it will actually be at their booth, on the show floor, for two days (August 6th and 7th).
The device, which is not branded, connects via PCIe 2.0 x4. It is designed for speed. It is allegedly capable of 3 million IOPS, with just 1.5 microseconds required for a single access. For comparison, the 800GB Intel SSD DC P3700, recently reviewed by Allyn, had a dominating lead over the competitors that he tested. It was just shy of 250 thousand IOPS. This is, supposedly, about twelve times faster.
While it is based on a different technology than NAND, and thus not directly comparable, the PCM chips are apparently manufactured at 45nm. Regardless, that is significantly larger lithography than competing products. Intel is manufacturing their flash at 20nm, while Samsung managed to use a 30nm process for their recent V-NAND launch.
What does concern me is the capacity per chip. According to the press release, it is 1Gb per chip. That is about two orders of magnitude smaller than what NAND is pushing. That is, also, the only reference to capacity in the entire press release. It makes me wonder how small the total drive capacity will be, especially compared to RAM drives.
Of course, because it does not seem to be a marketed product yet, nothing about pricing or availability. It will almost definitely be aimed at the enterprise market, though (especially given HGST's track record).
*** Update from Allyn ***
I'm hijacking Scott's news post with photos of the actual PCM SSD, from the FMS show floor:
In case you all are wondering, yes, it does in fact work:
One of the advantages of PCM is that it is addressed at smaller sections as compared to typical flash memory. This means you can see ~700k *single sector* random IOPS at QD=1. You can only pull off that sort of figure with extremely low IO latency. They only showed this output at their display, but ramping up QD > 1 should reasonably lead to the 3 million figure claimed in their release.