Subject: Storage, Shows and Expos | August 8, 2017 - 05:37 PM | Allyn Malventano
Tagged: z-ssd, vnand, V-NAND, Samsung, QLC, FMS 2017, 64-Layer, 3d, 32TB, 1Tbit
As is typically the case for Flash Memory Summit, the Samsung keynote was chock full of goodies:
Samsung kicked off by stating there are a good 5 years of revisions left in store for their V-NAND line, each with a corresponding increase in speed and capacity.
While V-NAND V4 was 64-layer TLC, V5 is a move to QLC, bringing per die capacity to 1Tbit (128 GB per die).
If you were to stack 32 of these new V5 dies per package, and do so in a large enough 2.5" housing, that brings the maximum capacity of such a device to a whopping 128TB!
Samsung also discussed a V2 of their Z-NAND, moving from SLC to MLC while only adding 2-3 us of latency per request. Z-NAND is basically a quicker version of NAND flash designed to compete with 3D XPoint.
M.2 SSDs started life with the working title of NGFF. Fed up with the limitations of this client-intended form factor for the enterprise, Samsung is pushing a slightly larger NGSFF form factor that supports higher capacities per device. Samsung claimed a PM983 NGSFF SSD will hold 16TB, a 1U chassis full of the same 576TB, and a 2U chassis pushing that figure to 1.15PB.
Last up is 'Key Value'. This approach allows the flash to be accessed more directly by the application layer, enabling more efficient use of the flash and therefore higher overall performance.
There were more points brought up that we will be covering later on, but for now here is the full press release that went out during the keynote: (after the break)
Subject: General Tech | August 29, 2016 - 02:27 PM | Jeremy Hellstrom
Tagged: z-ssd, NVMe, Samsung, HHHL
The Register had a quick chat with Samsung about the Z-SSD they announced at FMS 2016, hoping to get some details from the company about the technology behind the new product, with little success. We know it will be DRAM-NAND gap-filler such as the one Netlist announced earlier and will be possible competition for Intel's XPoint. Samsung did confirm that it will be NVMe and will initially launch as a half height, half length PCIe card, with other interfaces to follow. They did admit it will use 3D V-NAND, but would only hint at the custom circuit design they will use. The Register offers some prognostication at the end of the quick interview, you can see that right here.
"The mysterious Samsung Z-SSD was announced at the Flash Memory Summit, and positioned as a DRAM-NAND gap-filler. This makes it competition for XPoint. We asked Samsung about it, and here is what we learnt."
Here is some more Tech News from around the web:
- Players Seek 'No Man's Sky' Refunds, Sony's Content Director Calls Them Thieves @ Slashdot
- If you haven't changed your Dropbox password for 4 years, do so now @ The Register