Samsung Shows Off M.2 Form Factor Z-NAND Z-SSD at OCP Summit

Subject: Storage | March 29, 2018 - 10:43 PM |
Tagged: z-ssd, Z-NAND, workstation, Samsung, NVMe, M.2, HPC, enterprise

Samsung is expanding its Z-NAND based "Z-SSD" products with a new M.2 solid state drive for workstations and high-performance compute servers. Previously only available in half-height AIC (add-in-card) form factors, the SZ983 M.2 sports a M.2 22110 form factor and NVMe compatible PCI-E 3.0 x4 interface. The new drive was shown off at Samsung's booth during the Open Compute Project Summit in San Jose and was spotted by Anandtech who managed to snap a couple photos of it.

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Image credit: Anandtech spotted Samsung's M.2 Z-SSD at OCP Summit 2018.

The new M.2 Z-SSD will come in 240GB and 480GB capacities and sports an 8 channel Phoenix controller. The drive on display at OCP Summit 2018 had a part number of MZ1JB240HMGG-000FB-001. Comparing it to the SZ985 PCI-E SSD, this new M.2 drive appears to also have a DRAM cache as well as capacitors to protect data in the event of power loss (data writes would be able to completely write from the cache to the drive before safe shutdown) though we don't know if this drive has the same 1.5GB of LPDDR4 cache or not. Note that the sticker of the M.2 drive reads SZ983 while Samsung elsewhere had the M.2 labeled as the SZ985 (M.2) so it's unclear which name will stick when this actually launches though hopefully it's the former just to avoid confusion. The Phoenix (formerly Polaris v2) controller is allegedly going to also be used on some of the higher end V-NAND drives though we'll have to wait and see if that happens or not.

Anyway, back to performance numbers, Samsung rates the M.2 Z-SSD at 3200 MB/s sequential reads and 2800 MB/s sequential writes (so a bit slower than the SZ985 at writes). Samsung did not talk random IOPS numbers. The drive is rated at the same 30 DWPD (drive writes per day) endurance rating as the SZ985 and will have the same 5-year warranty. I am curious if the M.2 NVMe drive is able to hit the same (or close to) random IOPS numbers as the PCI-E card which is rated at up to 750,000 read and 170,000 write IOPS.

Z-NAND is interesting as it represents a middle ground between V-NAND and other 3D NAND flash and 3D XPoint memory in both terms of cost and latency performance with Z-NAND being closer in latency to XPoint than V-NAND. Where it gets interesting is that Z-NAND is essentially V-NAND just run at a different mode and yet they are able to reduce write latency by 5-times (12-to-20 microseconds) and cell read latency by up to 10-times (16 microseconds). While Samsung is already working on second generation Z-NAND, these drives are using first generation Z-NAND which is the more performance (lowest latency) type but costs quite a bit more than 2nd generation which is only a bit slower (more read latency). Judging by the form 110mm form factor, this M.2 drive is aimed squarely at datacenter and workstation usage and is not likely to lead to a consumer Optane 800P (et al) competitor, but if it does well enough we may see some prosumer and consumer Z-NAND based options in the future with newer generations of Z-NAND as they get the right balance of cost and latency for the desktop gaming and enthusiast market.

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Source: Anandtech

Samsung Introducing Z-NAND Based 800GB Z-SSD For Enterprise HPC

Subject: Storage | January 31, 2018 - 08:39 PM |
Tagged: z-ssd, Z-NAND, Samsung, HPC, enterprise, ai

Samsung will be introducing a new high performance solid state drive using new Z-NAND flash at ISSCC next month. The new Samsung SZ985 Z-SSD is aimed squarely at the high-performance computing (HPC) market for big data number crunching, supercomputing, AI research, and IoT application development. The new drive will come in two capacities at 800GB and 240GB and combines low latency Z-NAND flash with 1.5GB LPDDR4 DRAM cache and an unspecified "high performance" Samsung controller.

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The Z-NAND drive is interesting because it represents an extremely fast storage solution that offers up to 10-times cell read performance and 5-times less write latency than 3-bit V-NAND based drives such as Samsung's own PM963 NVMe SSD. The Z-NAND technology represents a middle ground (though closer to Optane than not) between NAND and X Point flash memory without the expense and complexity of 3D XPoint (at least, in theory). The single port 4-lane drive (PCI-E x4) reportedly is able to hit random read performance of 750,000 IOPS and random write performance of 170,000 IOPS. The drive is able to do this with very little latency at around 16µs (microseconds). To put that in perspective, a traditional NVMe SSD can exhibit write latencies of around 90+ microseconds while Optane sits at around half the latency of Z-NAND (~8-10µs). You can find a comparison chart of latency percentiles of various storage technologies here. While the press release did not go into transfer speeds or read latencies, Samsung talked about that late last year when it revealed the drive's existence. The SZ985 Z-SSD maxes out its x4 interface at 3.2 GB/s for both sequential reads and sequential writes. Further, read latencies are rated at between 12µs and 20µs. At the time Allyn noted that the 30 drive writes per day (DWPD) matched that of Intel's P4800X and stated that it was an impressive feat considering Samsung is essentially running its V-NAND flash in a different mode with Z-NAND. Looking at the specs, the Samsung SZ985 Z-SSD has the same 2 million hours MTBF but is actually rated higher for endurance at 42 Petabytes over five years (versus 41 PB). Both drives appear to offer the same 5-year warranty though we may have to wait for the ISSCC announcement for confirmation on that.

It appears that the SZ-985 offers a bit more capacity, higher random read IOPS, and better sequential performance but with slightly more latency and lower random write IOPS than the 3D XPoint based Intel Optane P4800X drive.

In all Samsung has an interesting drive and if they can price it right I can see them selling a ton of these drives to the enterprise market for big data analytics tasks as well as a high-speed drive for researchers. I am looking forward to more information being released about the Z-SSD and its Z-NAND flash technology at the ISSCC (International Solid-State Circuits Conference) in mid-February.

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Source: Samsung

FMS 2017: Samsung Announces QLC V-NAND, 16TB NGSFF SSD, Z-SSD V2, Key Value

Subject: Storage, Shows and Expos | August 8, 2017 - 05:37 PM |
Tagged: z-ssd, vnand, V-NAND, Samsung, QLC, FMS 2017, 64-Layer, 3d, 32TB, 1Tbit

As is typically the case for Flash Memory Summit, the Samsung keynote was chock full of goodies:

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Samsung kicked off by stating there are a good 5 years of revisions left in store for their V-NAND line, each with a corresponding increase in speed and capacity.

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While V-NAND V4 was 64-layer TLC, V5 is a move to QLC, bringing per die capacity to 1Tbit (128 GB per die).

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If you were to stack 32 of these new V5 dies per package, and do so in a large enough 2.5" housing, that brings the maximum capacity of such a device to a whopping 128TB!

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Samsung also discussed a V2 of their Z-NAND, moving from SLC to MLC while only adding 2-3 us of latency per request. Z-NAND is basically a quicker version of NAND flash designed to compete with 3D XPoint.

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M.2 SSDs started life with the working title of NGFF. Fed up with the limitations of this client-intended form factor for the enterprise, Samsung is pushing a slightly larger NGSFF form factor that supports higher capacities per device. Samsung claimed a PM983 NGSFF SSD will hold 16TB, a 1U chassis full of the same 576TB, and a 2U chassis pushing that figure to 1.15PB.

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Last up is 'Key Value'. This approach allows the flash to be accessed more directly by the application layer, enabling more efficient use of the flash and therefore higher overall performance.

There were more points brought up that we will be covering later on, but for now here is the full press release that went out during the keynote: (after the break)

Samsung is being a little cagey about their new Z-SSD

Subject: General Tech | August 29, 2016 - 02:27 PM |
Tagged: z-ssd, NVMe, Samsung, HHHL

The Register had a quick chat with Samsung about the Z-SSD they announced at FMS 2016, hoping to get some details from the company about the technology behind the new product, with little success.  We know it will be DRAM-NAND gap-filler such as the one Netlist announced earlier and will be possible competition for Intel's XPoint.  Samsung did confirm that it will be NVMe and will initially launch as a half height, half length PCIe card, with other interfaces to follow.  They did admit it will use 3D V-NAND, but would only hint at the custom circuit design they will use.  The Register offers some prognostication at the end of the quick interview, you can see that right here.

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"The mysterious Samsung Z-SSD was announced at the Flash Memory Summit, and positioned as a DRAM-NAND gap-filler. This makes it competition for XPoint. We asked Samsung about it, and here is what we learnt."

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Source: The Register