Podcast #494 - Intel 8th Gen launch, Samsung Z-NAND, and more!

Subject: General Tech | April 5, 2018 - 12:11 PM |
Tagged: Z-NAND, video, Samsung, project trillium, podcast, p20 pro, nuc, msi, Lenovo, Jedi Challenges, Intel 8th Gen, Intel, Huawei, H370, gigabyte, fractal design, Bloody Gaming, asus, apple, adata

PC Perspective Podcast #494 - 04/05/18

Join us this week for Intel 8th Gen launch, Samsung Z-NAND, and more!!

You can subscribe to us through iTunes and you can still access it directly through the RSS page HERE.

The URL for the podcast is: http://pcper.com/podcast - Share with your friends!

Hosts: Ryan Shrout, Allyn Malventano, Jeremy Hellstrom, Josh Walrath

Peanut Gallery: Ken Addison, Alex Lustenberg

Program length: 1:53:12

Podcast topics of discussion:

  1. Week in Review:
  2. News items of interest:
  3. Picks of the Week:
    1. Alex: Altered Carbon Trilogy
  4. Closing/outro
Source:

Samsung Shows Off M.2 Form Factor Z-NAND Z-SSD at OCP Summit

Subject: Storage | March 29, 2018 - 10:43 PM |
Tagged: z-ssd, Z-NAND, workstation, Samsung, NVMe, M.2, HPC, enterprise

Samsung is expanding its Z-NAND based "Z-SSD" products with a new M.2 solid state drive for workstations and high-performance compute servers. Previously only available in half-height AIC (add-in-card) form factors, the SZ983 M.2 sports a M.2 22110 form factor and NVMe compatible PCI-E 3.0 x4 interface. The new drive was shown off at Samsung's booth during the Open Compute Project Summit in San Jose and was spotted by Anandtech who managed to snap a couple photos of it.

Samsung Z-SSD M_2 NVMe.jpg

Image credit: Anandtech spotted Samsung's M.2 Z-SSD at OCP Summit 2018.

The new M.2 Z-SSD will come in 240GB and 480GB capacities and sports an 8 channel Phoenix controller. The drive on display at OCP Summit 2018 had a part number of MZ1JB240HMGG-000FB-001. Comparing it to the SZ985 PCI-E SSD, this new M.2 drive appears to also have a DRAM cache as well as capacitors to protect data in the event of power loss (data writes would be able to completely write from the cache to the drive before safe shutdown) though we don't know if this drive has the same 1.5GB of LPDDR4 cache or not. Note that the sticker of the M.2 drive reads SZ983 while Samsung elsewhere had the M.2 labeled as the SZ985 (M.2) so it's unclear which name will stick when this actually launches though hopefully it's the former just to avoid confusion. The Phoenix (formerly Polaris v2) controller is allegedly going to also be used on some of the higher end V-NAND drives though we'll have to wait and see if that happens or not.

Anyway, back to performance numbers, Samsung rates the M.2 Z-SSD at 3200 MB/s sequential reads and 2800 MB/s sequential writes (so a bit slower than the SZ985 at writes). Samsung did not talk random IOPS numbers. The drive is rated at the same 30 DWPD (drive writes per day) endurance rating as the SZ985 and will have the same 5-year warranty. I am curious if the M.2 NVMe drive is able to hit the same (or close to) random IOPS numbers as the PCI-E card which is rated at up to 750,000 read and 170,000 write IOPS.

Z-NAND is interesting as it represents a middle ground between V-NAND and other 3D NAND flash and 3D XPoint memory in both terms of cost and latency performance with Z-NAND being closer in latency to XPoint than V-NAND. Where it gets interesting is that Z-NAND is essentially V-NAND just run at a different mode and yet they are able to reduce write latency by 5-times (12-to-20 microseconds) and cell read latency by up to 10-times (16 microseconds). While Samsung is already working on second generation Z-NAND, these drives are using first generation Z-NAND which is the more performance (lowest latency) type but costs quite a bit more than 2nd generation which is only a bit slower (more read latency). Judging by the form 110mm form factor, this M.2 drive is aimed squarely at datacenter and workstation usage and is not likely to lead to a consumer Optane 800P (et al) competitor, but if it does well enough we may see some prosumer and consumer Z-NAND based options in the future with newer generations of Z-NAND as they get the right balance of cost and latency for the desktop gaming and enthusiast market.

Also read:

Source: Anandtech

Podcast #485 - Intel and AMD Earnings, Samsung Z-NAND, GDDR6 and more!

Subject: General Tech | February 1, 2018 - 12:24 PM |
Tagged: Z-NAND, western digital, supernova, ssd, Samsung, podcast, NVMe, K68, Intel, evga, earnings, corsair, amd, 760p

PC Perspective Podcast #485 - 02/01/18

Join us this week for a recap of news and reviews including Intel and AMD Earnings, Samsung Z-NAND, GDDR6 and more!

You can subscribe to us through iTunes and you can still access it directly through the RSS page HERE.

The URL for the podcast is: http://pcper.com/podcast - Share with your friends!

Hosts: Ryan Shrout, Jeremy Hellstrom, Josh Walrath, Allyn Malventano

Peanut Gallery: Alex Lustenberg, Ken Addison

Program length: 1:23:43

Podcast topics of discussion:

  1. Week in Review:
  2. News items of interest:
  3. Picks of the Week:
    1. 1:11:15 Ryan: APC 1500VA UPS
  4. Closing/outro
 

Samsung Introducing Z-NAND Based 800GB Z-SSD For Enterprise HPC

Subject: Storage | January 31, 2018 - 08:39 PM |
Tagged: z-ssd, Z-NAND, Samsung, HPC, enterprise, ai

Samsung will be introducing a new high performance solid state drive using new Z-NAND flash at ISSCC next month. The new Samsung SZ985 Z-SSD is aimed squarely at the high-performance computing (HPC) market for big data number crunching, supercomputing, AI research, and IoT application development. The new drive will come in two capacities at 800GB and 240GB and combines low latency Z-NAND flash with 1.5GB LPDDR4 DRAM cache and an unspecified "high performance" Samsung controller.

Samsung_800GB_Z-SSD_P3_180129.jpg

The Z-NAND drive is interesting because it represents an extremely fast storage solution that offers up to 10-times cell read performance and 5-times less write latency than 3-bit V-NAND based drives such as Samsung's own PM963 NVMe SSD. The Z-NAND technology represents a middle ground (though closer to Optane than not) between NAND and X Point flash memory without the expense and complexity of 3D XPoint (at least, in theory). The single port 4-lane drive (PCI-E x4) reportedly is able to hit random read performance of 750,000 IOPS and random write performance of 170,000 IOPS. The drive is able to do this with very little latency at around 16µs (microseconds). To put that in perspective, a traditional NVMe SSD can exhibit write latencies of around 90+ microseconds while Optane sits at around half the latency of Z-NAND (~8-10µs). You can find a comparison chart of latency percentiles of various storage technologies here. While the press release did not go into transfer speeds or read latencies, Samsung talked about that late last year when it revealed the drive's existence. The SZ985 Z-SSD maxes out its x4 interface at 3.2 GB/s for both sequential reads and sequential writes. Further, read latencies are rated at between 12µs and 20µs. At the time Allyn noted that the 30 drive writes per day (DWPD) matched that of Intel's P4800X and stated that it was an impressive feat considering Samsung is essentially running its V-NAND flash in a different mode with Z-NAND. Looking at the specs, the Samsung SZ985 Z-SSD has the same 2 million hours MTBF but is actually rated higher for endurance at 42 Petabytes over five years (versus 41 PB). Both drives appear to offer the same 5-year warranty though we may have to wait for the ISSCC announcement for confirmation on that.

It appears that the SZ-985 offers a bit more capacity, higher random read IOPS, and better sequential performance but with slightly more latency and lower random write IOPS than the 3D XPoint based Intel Optane P4800X drive.

In all Samsung has an interesting drive and if they can price it right I can see them selling a ton of these drives to the enterprise market for big data analytics tasks as well as a high-speed drive for researchers. I am looking forward to more information being released about the Z-SSD and its Z-NAND flash technology at the ISSCC (International Solid-State Circuits Conference) in mid-February.

Also read:

Source: Samsung

Podcast #477 - Cord Cutting, Holiday Gift Guide, and more!

Subject: General Tech | November 30, 2017 - 02:38 PM |
Tagged: Z-NAND, video, Samsun, powercolor, podcast, InWin 301, holiday guide, HAVIT HV-KB395L, GIGABYTE AX370, Corsair HS50, Corsair Crystal 460X, cord cutting, Console Frame Rating

PC Perspective Podcast #477 - 11/30/17

Join us for discussion on Cord Cutting, Holiday Gift Guide, and more!

You can subscribe to us through iTunes and you can still access it directly through the RSS page HERE.

The URL for the podcast is: http://pcper.com/podcast - Share with your friends!

Hosts: Ryan Shrout, Josh Walrath, Jeremy Hellstrom, Allyn Malventano

Peanut Gallery: Alex Lustenberg, Ken Addison

Program length: 1:22:41

Podcast topics of discussion:
  1. Week in Review:
  2. News items of interest:
  3. Closing/outro

Source:

Samsung SZ985 Z-NAND SSD - Upcoming Competition for Intel's P4800X?

Subject: Storage | November 20, 2017 - 10:56 PM |
Tagged: Z-NAND, SZ985, slc, Samsung, P4800X, nand, Intel, flash

We haven't heard much about Samsung's 'XPoint Killer' Z-NAND since Flash Memory Summit 2017, but now we have a bit more to go on:

z-nand specs.png

Yes, actual specs. In print. Not bad either, considering the Samsung SZ985 appears to offer a bus-saturating 3.2GB/s for reads and writes. The 30 DWPD figure matches Intel's P4800X, which is impressive given Samsung's part operates on flash derived from their V-NAND line (but operating in a different mode). The most important figures here are latency, so let's focus there for a bit:

bridging the gap samsung z-nand.png

While the SZ985 runs at ~1/3rd the latency of Samsung's own NAND SSDs, it has roughly double the latency of the P4800X. For the moment that is actually not as bad as it seems as it takes a fair amount of platform optimization to see the full performance benefits of optane, and operating slightly higher on the latency spectrum helps negate the negative impacts of incorrectly optimized platforms:

02 - IRQ service time penalty.png

Source: Shrout Research

As you can see above, operating at slightly higher latencies, while netting lower overall performance, does lessen the sting of platform induced IRQ latency penalties.

170808-120245.jpg

Now to discuss costs. While we don't have any hard figures, we do have the above slide from FMS 2017, where Samsung stressed that they are trying to get the costs of Z-NAND down while keeping latencies as low as possible.

z-nand.jpg

Image Source: ExtremeTech

Samsung backed up their performance claims with a Technology Brief (available here), which showed decent performance gains and cited use cases paralleling those we've seen used by Intel. The takeaway here is that Samsung *may* be able to compete with the Intel P4800X in a similar performance bracket - not matching the performance but perhaps beating it on cost. The big gotcha is that we have yet to see a single Samsung NVMe Enterprise SSD come through our labs for testing, or anywhere on the market for that matter, so take these sorts of announcements with a grain of salt until we see these products gain broader adoption/distribution.

Source: Samsung