Subject: Storage | February 7, 2018 - 10:03 PM | Tim Verry
Tagged: tlc, SK Hynix, enterprise ssd, 72-layer tlc, 3d-v4, 3d nand
SK Hynix has revealed its new enterprise solid state drives based on 72-layer 512 Gb 3D TLC NAND flash dies paired with the company's own in-house controller and firmware. The SK Hynix eSSDs are available in a traditional SAS/SATA interfacing product with capacities up to 4TB and a PCI-E variant that comes in 'above 1TB." Both drive types are reportedly being sampled to datacenter customers in the US.
SK Hynix has managed to double the capacity and improve the read latency of its new 512 Gb 72-layer NAND flash over its previous 256 Gb 72-layer flash which debuted last year. The eSSD product reportedly hits sequential read and write speeds of 560 MB/s and 515 MB/s respectively. Interestingly, while random read IOPS hit 98,000, random write performance is significantly lower at 32,000 IOPS. SK Hynix did not go into details, but I suspect this has to do with the tuning they did to improve read latency and the nature of the 72-layer stacked TLC flash.
Moving up to the PCI-E interfacing eSSD, customers can expect greater than 1TB capacities (SK Hynix did not specify the maximum capacity they will offer) with sequential reads hitting up to 2,700 MB/s and sequential writes hitting 1,100 MB/s. The random performance is similar to the above eSSD with write performance being much lower than read performance at 230K read IOPS and 35K write IOPS maximum. The greatly limited write performance may be the result of the drive not having enough flash channels or the flash itself not being fast enough at writes which was a tradeoff SK Hynix had to make to hit the capacity targets with larger capacity 512 Gb (64 GB) dies.
Unfortunately, SK Hynix has not yet provided further details on its new eSSDs or the 3D-V4 TLC NAND it is using in the new drives. SK Hynix continuing to push into the enterprise storage market with its own SSDs is an interesting play that should encourage them push for advancements and production efficiencies to advance NAND flash technology.
- SK Hynix Launches Its 8Gb GDDR6 Memory Running at 14 Gbps
- SK Hynix has huge stacks of NAND
- Samsung and SK Hynix Discuss The Future of High Bandwidth Memory (HBM) At Hot Chips 28
Subject: Graphics Cards, Memory | January 24, 2018 - 11:04 PM | Tim Verry
Tagged: SK Hynix, graphics memory, gddr6, 8gb, 14Gbps
SK Hynix recently updated its product catalog and announced the availability of its eight gigabit (8 Gb) GDDR6 graphics memory. The new chips come in two SKUs and three speed grades with the H56C8H24MJR-S2C parts operating at 14 Gbps and 12 Gbps and the H56C8H24MJR-S0C operating at 12 Gbps (but at higher voltage than the -S2C SKU) and 10 Gbps. Voltages range from 1.25V for 10 Gbps and either 1.25V or 1.35V for 12 Gbps to 1.35V for 14 Gbps. Each 8 Gb GDDR6 memory chip holds 1 GB of memory and can provide up to 56 GB/s of per-chip bandwidth.
While SK Hynix has a long way to go before competing with Samsung’s 18 Gbps GDDR6, its new chips are significantly faster than even its latest GDDR5 chips with the company working on bringing 9 Gbps and 10 Gbps GDDR5 to market. As a point of comparison, its fastest 10 Gbps GDDR5 would have a per chip bandwidth of 40 GB/s versus its 14 Gbps GDDR6 at 56 GB/s. A theoretical 8GB graphics card with eight 8 Gb chips running at 10 Gbps on a 256-bit memory bus would have maximum bandwidth of 320 GB/s. Replacing the GDDR5 with 14 Gbps GDDR6 in the same eight chip 256-bit bus configuration, the graphics card would hit 448 GB/s of bandwidth. In the Samsung story I noted that the Titan XP runs 12 8 Gb GDDR5X memory chips at 11.4 Gbps on a 384-bit bus for bandwidth of 547 GB/s. Replacing the G5X with GDDR6 would ramp up the bandwidth to 672 GB/s if running the chips at 14 Gbps.
|Chip Pin Speed||Per Chip Bandwidth||256-bit bus||384-bit bus||1024-bit (one package)||4096-bit (4 packages)|
|10 Gbps||40 GB/s||320 GB/s||480 GB/s|
|48 GB/s||384 GB/s||576 GB/s|
|14 Gbps||56 GB/s||448 GB/s||672 GB/s|
|16 Gbps||64 GB/s||512 GB/s||768 GB/s|
|18 Gbps||72 GB/s||576 GB/s||864 GB/s|
|HBM2 2 Gbps||256 GB/s||256 GB/s||1 TB/s|
GDDR6 is still a far cry from High Bandwidth Memory levels of performance, but it is much cheaper and easier to produce. With SK Hynix ramping up production and Samsung besting the fastest 16 Gbps G5X, it is likely that the G5X stop-gap will be wholly replaced with GDDR6 and things like the upgraded 10 Gbps GDDR5 from SK Hynix will pick up the low end. As more competition enters the GDDR6 space, prices should continue to come down and adoption should ramp up for the new standard with the next generation GPUs, game consoles, network devices, ect. using GDDR6 for all but the highest tier prosumer and enterprise HPC markets.
Subject: General Tech | September 22, 2017 - 02:05 PM | Jeremy Hellstrom
Tagged: DRAM, Samsung, SK Hynix, micron
The change process technology continues to have a negative effect on DRAM supplies and according to the story posted on Electronics Weekly there is no good news in sight. The three major vendors, Samsung, SK Hynix and Micron are all slowing production as a result of new fabs being built and existing production lines upgraded for new process technology such as EUV. This will ensure that prices continue to slowly creep up over the remainder of this year and likely into 2018. Drop by for more information on the challenges each are facing.
"While overall DRAM demand will remain high in 2018, new fabs being planned will not be ready for mass production until 2019 at the earliest."
Here is some more Tech News from around the web:
- What Happened To ReRAM? @ Semiconductor Engineering
- esla Discontinues Its Most Affordable Model S @ Slashdot
- Ah, good ol' Windows update cycles... Wait, before anything else, check your hardware @ The Register
- Asustek to launch next-generation ZenFone 5 in March 2018 @ DigiTimes
- Parrot mimics owner to make purchases using Amazon Echo @ The Inquirer
- BlackBerry's QNX to run autonomous car software @ The Register
- iOS11 turns Bluetooth and Wifi back on if its 5am, or you walk about a bit @ The Inquirer
Subject: General Tech, Graphics Cards | August 28, 2017 - 12:31 PM | Jeremy Hellstrom
Tagged: Samsung, SK Hynix
Just when you thought it was safe to start GPU shopping, with demand from miners dropping off somewhat, the NAND shortage is set to crank up prices again. First time miners have realize they are not about to become overnight billionaires and the dedicated miners have already picked up their GPUs; unless they just picked up this board, so there was some hope GPU prices might descend closer to their original MRSP. Unfortunately the suppliers of VRAM have shifted their production capacity more heavily in favour of server memory and RAM for smartphones which has lead to a dearth of VRAM. DigiTimes reports you can expect the price of NVIDIA cards to jump from 3-10% at the end of the month.
AMD's new offerings will not be effected by this; few and far between are the servers or phones which use HBM2. It would be interesting to discover that part of their original pricing took this into account; not that it matters overly as their original pricing statement has been tossed.
"With Samsung and SK Hynix cutting their memory supply for the graphics card segment, August quotes for RAMs used in graphics cards have risen to US$8.50, up by 30.8% from US$6.50 in July. Both memory suppliers have allocated more of their production capacities to making memories for servers and handsets, reducing output for the graphics cards segment and fueling the price rally."
Here is some more Tech News from around the web:
- Is it possible to control Amazon Alexa, Google Now using inaudible commands? Absolutely @ The Register
- A Functioning 3D Printer For 10€ @ Hack a Day
- Google Updates: Hardware, Firmware, The Firm @ The Inquirer
- World's first crowdsourced tablet, Eve V, is taking aim at the Surface Pro @ The Inquirer
- Gather round, kids, and let's try to understand the science of 3D NAND @ The Register
- A Game You Control With Your Mind @ Slashdot
- AVM FRITZ!Box 7560 AC1300 VDSL/ADSL Modem Router Review @ NikKTech
Subject: General Tech | August 16, 2017 - 12:41 PM | Jeremy Hellstrom
Tagged: Samsung, SK Hynix, micron, EVGA G3 850W
DigiTimes is the bearer of bad news for fans of GPUs, as the supply challenges which have marked 2017 are now spreading to GDDR5(x). This month the price has spiked up just over 30% and that trend is going to continue into September and perhaps beyond. This will not have an immediate effect on the MSRPs of graphics cards, not that we would notice due to the price inflation from the current mining craze however it will reduce the margins that NVIDIA and AMD receive from sales. They do not specifically mention AMD in the article, nor HBM2, however the same companies fabricate both so there are likely to be repercussions felt by both technologies. On the positive side, flash storage prices are reported to have stabilized; so we have that going for us.
"August quotes for RAMs used in VGA graphics cards have risen to US$8.50, up by 30.8% from US$6.50 in July. Both RAM industry leaders Samsung Electronics and SK Hynix have allocated part of their VGA RAM production capacities to producing memories for servers and handsets, fueling the price rally."
Here is some more Tech News from around the web:
- Fresh Microsoft Office franken-exploit flops – and you should have patched by now anyway @ The Register
- Outage outed: Bing dinged, Microsoft portal mortal, DuckDuckGo becomes DuckDuckNo @ The Register
- How To: Taking Pictures of PCBs @ Techspot
Subject: General Tech | July 6, 2017 - 12:33 PM | Jeremy Hellstrom
Tagged: ram, micron, rumour, SK Hynix, toshiba
As is tradition, after we received hopeful news yesterday about Samsung's investing in the expansion of their flash production we now have bad news out of Micron. DRAMeXchange reported a nitrogen leak in Micron's Taoyuan fab which prompted an evacuation and the possible stillbirth of ~60,000 wafer starts, or about 5.5% cut in the amount of RAM available by the end of the month. Trendforce also reported the same incident and numbers.
Micron has released a statement contradicting these stories, stating that while there was an incident, there was no real impact to the business or to employees. One hopes that is the more accurate report as that particular Fab produces LPDDR4, which is already in high demand and short supply. Indeed, another story mentions that SK Hynix and Toshiba's 3D NAND production was well below expectations and that the supply of NAND for iPhones may fall short by as much as 30%.
This would imply that any impact on Micron's RAM production, even if nowhere near the amount mentioned by the press, would have a large effect on the market in the coming quarters. Samsung will certainly try to capture some of this demand, but the upgrades to their Fabs are still a while off and they are already operating at close to maximum capacity. Fingers crossed we don't hear bad news from GLOFO tomorrow morning!
"Micron Technology has issued a statement regarding recent reports about its fabrication facility in Taoyuan, Taiwan. Micron clarified that there was no nitrogen leaking incident nor evacuation of personnel. A minor event did occurred at the facility, but operations are recovering speedily without material impact to the business."
Here is some more Tech News from around the web:
- John McAfee and Intel settle name battle @ The Inquirer
- Microsoft's redesign of Skype is really upsetting almost everyone @ The Inquirer
- U wot M8? Oracle chip designers quietly work on new SPARC CPU @ The Register
- OpenBSD Will Get Unique Kernels On Each Reboot @ Slashdot
- Create a user called '0day', get bonus root privs – thanks, Systemd! @ The Register
- Cha-ching! NotPetya hackers cash out – but victims won't ever see that data again @ The Register
Subject: General Tech | April 11, 2017 - 01:29 PM | Jeremy Hellstrom
Tagged: SK Hynix, 72 layer, tlc
SK Hynix have created an impressive die which has 72 layers of TLC 3D NAND. The storage density of their chips are somewhat lower than the competition, this particular chip sports 256Gb of capacity. This is due to the larger size of SK Hynix's cells, which has the benefit of allowing more layers than other manufacturers have been able to successfully create. The Register was told that compared to the previous generation of 48 layer NAND you could expect to see up to a 20% increase in read and write speeds, another benefit to their new process. To think, it was just a year ago that Al first introduced us to what 3D NAND would mean to the PC industry.
"Korean flash fabber SK Hynix has built a 72-layer 3D NAND die with 256Gb capacity. That number of layers, in effect a higher-rise flash chip than anybody else has built, is impressive but the 256Gb capacity is not; Toshiba's 64-layer flash die has a 512Gb capacity. Like the SK Hynix chip, it is a TLC (3bits/cell) device. It started sample shipping in February."
Here is some more Tech News from around the web:
- Researchers see inside integrated circuits at high resolution @ Nanotechweb
- Qualcomm: Apple underclocked iPhone 7 chips so Intel wasn't outperformed @ The Inquirer
- Windows 10 Creators Update is quite a small major update @ Ars Technica
- Fitbit's New Smartwatch Has Been Plagued By Production Mishaps @ Slashdot
- Intel's buggy Puma 6 chipset earns Arris a gigabit-modem lawsuit @ The Register
- Another Windows version hits End of Life. Vista, we hardly knew you @ The Inquirer
- PC In A Mouse @ Hack a Day
Subject: Memory | August 25, 2016 - 02:39 AM | Tim Verry
Tagged: TSV, SK Hynix, Samsung, hot chips, hbm3, hbm
Samsung and SK Hynix were in attendance at the Hot Chips Symposium in Cupertino, California to (among other things) talk about the future of High Bandwidth Memory (HBM). In fact, the companies are working on two new HBM products: HBM3 and an as-yet-unbranded "low cost HBM." HBM3 will replace HBM2 at the high end and is aimed at the HPC and "prosumer" markets while the low cost HBM technology lowers the barrier to entry and is intended to be used in mainstream consumer products.
As currently planned, HBM3 (Samsung refers to its implementation as Extreme HBM) features double the density per layer and at least double the bandwidth of the current HBM2 (which so far is only used in NVIDIA's planned Tesla P100). Specifically, the new memory technology offers up 16Gb (~2GB) per layer and as many as eight (or more) layers can be stacked together using TSVs into a single chip. So far we have seen GPUs use four HBM chips on a single package, and if that holds true with HBM3 and interposer size limits, we may well see future graphics cards with 64GB of memory! Considering the HBM2-based Tesla will have 16 and AMD's HBM-based Fury X cards had 4GB, HBM3 is a sizable jump!
Capacity is not the only benefit though. HBM3 doubles the bandwidth versus HBM2 with 512GB/s (or more) of peak bandwidth per stack! In the theoretical example of a graphics card with 64GB of HBM3 (four stacks), that would be in the range of 2 TB/s of theoretical maximum peak bandwidth! Real world may be less, but still that is many terabytes per second of bandwidth which is exciting because it opens a lot of possibilities for gaming especially as developers push graphics further towards photo realism and resolutions keep increasing. HBM3 should be plenty for awhile as far as keeping the GPU fed with data on the consumer and gaming side of things though I'm sure the HPC market will still crave more bandwidth.
Samsung further claims that HBM3 will operate at similar (~500MHz) clocks to HBM2, but will use "much less" core voltage (HBM2 is 1.2V).
Stacked HBM memory on an interposer surrounding a processor. Upcoming HBM technologies will allow memory stacks with double the number of layers.
HBM3 is perhaps the most interesting technologically; however, the "low cost HBM" is exciting in that it will enable HBM to be used in the systems and graphics cards most people purchase. There were less details available on this new lower cost variant, but Samsung did share a few specifics. The low cost HBM will offer up to 200GB/s per stack of peak bandwidth while being much cheaper to produce than current HBM2. In order to reduce the cost of production, their is no buffer die or ECC support and the number of Through Silicon Vias (TSV) connections have been reduced. In order to compensate for the lower number of TSVs, the pin speed has been increased to 3Gbps (versus 2Gbps on HBM2). Interestingly, Samsung would like for low cost HBM to support traditional silicon as well as potentially cheaper organic interposers. According to NVIDIA, TSV formation is the most expensive part of interposer fabrication, so making reductions there (and somewhat making up for it in increased per-connection speeds) makes sense when it comes to a cost-conscious product. It is unclear whether organic interposers will win out here, but it is nice to seem them get a mention and is an alternative worth looking into.
Both high bandwidth and low latency memory technologies are still years away and the designs are subject to change, but so far they are both plans are looking rather promising. I am intrigued by the possibilities and hope to see new products take advantage of the increased performance (and in the latter case lower cost). On the graphics front, HBM3 is way too far out to see a Vega release, but it may come just in time for AMD to incorporate it into its high end Navi GPUs, and by 2020 the battle between GDDR and HBM in the mainstream should be heating up.
What are your thoughts on the proposed HBM technologies?
Subject: Storage | June 16, 2016 - 02:54 PM | Jeremy Hellstrom
Tagged: SK Hynix, enterprise ssd, SE3010
SK Hynix's SE3010 uses their own controller, the eight channel SH87910AA Pearl and in the case of the 960GB model, eight 16nm 128Gb MLC NAND chips with a mysterious H27Q18YEB9a label and four capacitors to prevent data loss in the case of unexpected power loss. The drive is optimized for read speeds and Kitguru's testing certainly shows that they were effective in their implementation. Check out the write speed and overall conclusions in the full review.
"When we last looked at an SSD from SK hynix it was from their consumer portfolio. This time around we are looking at a drive from the other part of their storage business in the shape of the SE3010, a read intensive drive for the Enterprise market space."
Here are some more Storage reviews from around the web:
- Crucial's MX300 SSD @ The Tech Report
- Crucial MX300 750GB Limited Edition @ Kitguru
- Crucial MX300 @ The SSD Review
- Samsung 750 EVO 500GB SSD @ Guru of 3D
- Samsung Portable SSD T3 (1TB) @ Bjorn3d
Subject: Storage, Shows and Expos | January 6, 2016 - 06:00 AM | Allyn Malventano
Tagged: tlc, SM2260, SM2258, SM2256, SM2246EN, slc, SK Hynix, silicon motion, mlc, micron, Intel, imft, CES 2016, CES, 3d nand
Silicon Motion has updated their popular SM2246EN controller to support MLC 3D NAND from IMFT and SK Hynix:
The SM2246EN acts as a gateway for third parties to make their own SSDs. Adding support for 3D NAND is good news, as it means we will be able to see third party SSDs launch with 3D flash sourced from Intel, Micron, or SK Hynix. Another cool tidbit is the fact that those demo units in the above photo were equipped and operating with actual 3D NAND from Intel, Micron, and SK Hynix. Yes, this is the first time seeing packaged MLC 3D NAND from a company other than Samsung. Here are some close-ups for those who want to read part numbers:
Another question on non-Samsung 3D NAND is how does its performance stack up against planar (2D) NAND? Silicon Motion had a bit of an answer to that question for us:
Keep in mind those are results from pre-production firmware, but I was happy to see that my prediction of IMFT 3D NAND speeds being effectively equal to their previous 2D flash was correct.
To knock out some other info overheard at our briefing, Silicon Motion will also be making an SM2258, which will be a TLC 3D NAND variant of the SM2256. In addition, we saw the unreleased SM2260:
...which is Silicon Motion's PCIe 3.0 x4 SSD controller. This one is expected to surface towards the middle of 2016, and it is currently in the OEM testing stage.
Lots more storage goodies coming later today, so stay tuned! Full press blast for the updates SM2246EN after the break.
Follow all of our coverage of the show at http://pcper.com/ces!