Subject: Mobile | September 28, 2016 - 09:04 PM | Scott Michaud
Tagged: Samsung, recall, galaxy note 7
Bloomberg is reporting that a 25-year-old customer from China, Hui Renjie, claims to have received a replacement Galaxy Note 7, and that it caught fire within 24 hours. A representative of the company immediately visited him and asked to take the phone to investigate, but the customer wished to go public first, assuming that he wouldn't get any answers if he just gave up the phone silently. The explosion allegedly caused minor burns to two of the customer's fingers, as well as damaged his MacBook.
Naturally, Samsung is very interested in what happened. The previous incident involved Samsung-developed batteries. The manufacturing process accidentally pushed some the battery batch's two terminals together. Shorting out a battery causes it to release energy quickly as heat, which is often undesirable, to say the least.
Samsung is waiting to examine the device before they comment further. If you have also receive a replacement, then you might want to keep it powered off and disconnected from the charger until we find out what happened.
Subject: General Tech | September 22, 2016 - 11:25 AM | Ryan Shrout
Tagged: video, Samsung, rivet, podcast, nvidia, msi, killer network, fatal1ty, evga, cooler, amd, 960 PRO, 960 EVO
PC Perspective Podcast #418 - 09/22/16
Join us this week as we discuss an air cooler roundup, Samsung 960 EVO and Pro announcement and more!
The URL for the podcast is: http://pcper.com/podcast - Share with your friends!
- iTunes - Subscribe to the podcast directly through the Store (audio only)
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- RSS - Subscribe through your regular RSS reader (audio only)
- MP3 - Direct download link to the MP3 file
Hosts: Josh Walrath, Jeremy Hellstrom, Sebastian Peak and Ken Addison
Program length: 1:10:13
Subject: Storage | September 21, 2016 - 12:00 AM | Allyn Malventano
Tagged: ssd, Samsung, pcie, NVMe, M.2, 960 PRO, 960 EVO
I'm currently running around at the various briefings and events here at Samsung's Global SSD Summit, but we did get some details on the 960 PRO and EVO that I've set to go live at the NDA time of 1 PM Seoul time.
Here is a distilled version of the specs, capacities, and prices of the 960 PRO and EVO:
- 512GB, 1TB, 2TB capacities
- Sequential: 3.5 GB/s reads / 2.1 GB/s writes
- 4K random (IOPS): 440,000 read / 360,000 write
- Dynamic Thermal Guard (new version of their overtemperature protection - details below)
- 5 year warranty, endurace peaks at 1.2PBW for the 2TB model
- 512GB model = $329.99 ($0.64/GB)
- 250GB, 500GB, 1TB capacities
- Sequential: 3.2 GB/s reads / 1.9 GB/s writes (write speed is for TurboWrite SLC cache)
- 4K random (IOPS): 380,000 read / 360,000 write
- Dynamic Thermal Guard
- 3 year warranty, endurance up to 400TBW for the 1TB model
- 250GB = $129.99 ($0.52/GB)
I would certainly like to see Samsung push the 960 EVO capacities upwards of 4TB, and with competing M.2 NVMe products shipping at a lower cost, those prices use some tweaking as well.
More information and pics to follow later today (tonight for you USA folks)!
**UPDATE** - since everyone is in bed and hasn't read any of this yet, I'm just going to add the information from the presentation here.
First, some of you may be wondering about the inverted capacity difference between the PRO and EVO. Historically, Samsung has shipped their EVO line in higher capacities than the PRO line. The 850 EVO currently ships in capacities up to 4TB, while the 850 PRO remains limited to 2TB. If you look closely at the photos above, you'll note that there are four flash packages on the PRO, while there are only two on the EVO. The cause for this difference is that the DRAM package (visible on the EVO) is integrated within the controller package on the PRO model. This is similar to what Samsung has done with their PM971-NVMe SSD, which has not only the controller and DRAM, but the flash itself all stacked within a *single* package. Samsung calls this package-on-package (PoP):
During the Q&A, Samsung's Unsoo Kim indicated that future 960 EVO's may also shift to the PoP design in order to shift to 4 packages, and therefore double (or quadruple) the capacity on that line in the future.
Samsung also tackled thermal throttling head-on with what they call Dynamic Thermal Guard. This is a combination of a few things. First is the reduced power consumption - the new controller draws ~10% less power despite moving to a 5-core design (up from a 3-core on the 950 PRO). Second, and perhaps more interesting, is a new heat spreading label:
This new label contains a copper layer that helps spread heat across more of the surface area of the M.2 part. Samsung gets bonus points for outside the box thinking there. The combination of the reduced power draw and the heat spreader help to make thermal throttling even more impossible under typical use:
While the above chart was for reads (writes produce more heat), that's still a very good improvement, and being able to move potentially the full drive capacity before throttling is pretty good, especially considering the new models are moving data at a much faster speed. About those faster speeds, here are some increased details on the per-capacity specs:
Take the 960 EVO write specs with a grain of salt - those are assuming writes are going into the SLC cache area but never fear because TurboWrite is getting a boost as well:
This new 'Intelligent TurboWrite' increases the SLC cache area significantly over that of the 850 EVO we are all used to, with up to a 42GB area on the 1TB model! This should make it easier to swallow those boastful write performance claims, as there's a really good chance that all writes any typical user applies to the new EVO will go straight into that new larger cache.
Apologies for the odd cutoffs on these pictures. They were corrected for parallax prior to posting. I also couldn't do anything about the presenter being in the way of the data :). I've requested slides from Samsung and will replace these here if/when they are provided.
Last but not least was a newly announced '2.0' version of the Samsung proprietary NVMe driver, which should help enable these increased speeds, as the Windows InBox driver is certainly not optimized to handle them. With the driver comes a new ground-up redesign of Samsung's Magician software, which added support for file-specific secure erasure and a special 'Magic Vault' secure encrypted area of the SSD that can be invisible to the host OS when locked.
This appears to be the bulk of what is to be announced at the Summit, so for now, I leave you with the endurance ratings and (MSRP) pricing for all capacities / models:
Subject: Storage | September 20, 2016 - 06:01 AM | Allyn Malventano
Tagged: Samsung, 960 PRO, 960 EVO, NVMe, pcie, ssd, Summit, Global
Your humble Storage Editor is once again in Seoul, Korea. With these trips comes unique skylines:
...the Seoul Tower:
...and of course, SSD announcements! Samsung has a habit of slipping product pics into the yearly theme. This year they were a bit more blunt about it:
Yup, looks like tomorrow we will see Samsung officially announce their successor to the 950 PRO. We'll be hearing all about the 960 PRO and the new 960 EVO tomorrow, exactly three months after we broke the early news of these new models.
There will, of course, be more details tomorrow once we attend the relevant product briefings. This will be late at night for those of you back in the states. No further details for now. I'm off to get some dinner and recover from that 14-hour flight!
Subject: Mobile | September 2, 2016 - 06:09 PM | Scott Michaud
Tagged: Samsung, galaxy note 7
According to Samsung, there have been 35 reported cases of defective Galaxy Note 7 batteries. In response, they will voluntarily replace all existing Galaxy Note 7 devices “over the coming weeks”. They have also stopped selling the devices, presumably, because they are capable of fixing the devices for existing customers, until the stock can be replaced.
This comes after reports that Galaxy Note 7 phones have been either catching fire or exploding. Some outlets are claiming that Samsung has confirmed 35 cases of fire or explosion, but, unless these outlets have more information than on the public statement, Samsung has only confirmed 35 complaints, and it's possible that other, related issues were included in that tally (like feeling excessively hot).
They did not mention a specific way for Galaxy Note 7 owners to request a replacement in their press release, but their technical support contact information is available here. I assume that they will point you in the right direction.
Subject: Storage | August 29, 2016 - 04:37 PM | Jeremy Hellstrom
Tagged: microSD, Samsung, evo plus, U3, UHS-I
A while back Al broke down the specifications of SD cards and what each class meant and the proper usage for them. The top class is U3 and it offers transfer speeds high enough to support recording 4K video on your devices and that happens to be the rating on the new 256GB Samsung EVO Plus MicroSD. Legion Hardware just tested this MicroSD card and it now holds the title of best performing SD card they have tested. The performance does come at a premium, the MSRP of the card is $250 and even with a 10 year warranty this is still an expensive purchase. If you need the ability to record 4K video immediately this is the fast solution available but if you are still in the planning stages, remember that there is a new standard, UFS, which is due to hit the market soon and impact pricing of older products.
"Running out of storage on your smartphone, tablet or 4K video camera? Well the good news is SD cards have never been more affordable and crucially offered such huge storage capacities. In fact, Samsung recently announced the availability of a 256GB version of their popular EVO Plus MicroSD card series"
Here are some more Storage reviews from around the web:
- Seagate Innov8 8TB USB 3.1 Type-C Desktop HDD @ Nikktech
- Drobo 5n NAS @ Kitguru
- Asustor AS3102T @ Kitguru
Subject: General Tech | August 29, 2016 - 02:27 PM | Jeremy Hellstrom
Tagged: z-ssd, NVMe, Samsung, HHHL
The Register had a quick chat with Samsung about the Z-SSD they announced at FMS 2016, hoping to get some details from the company about the technology behind the new product, with little success. We know it will be DRAM-NAND gap-filler such as the one Netlist announced earlier and will be possible competition for Intel's XPoint. Samsung did confirm that it will be NVMe and will initially launch as a half height, half length PCIe card, with other interfaces to follow. They did admit it will use 3D V-NAND, but would only hint at the custom circuit design they will use. The Register offers some prognostication at the end of the quick interview, you can see that right here.
"The mysterious Samsung Z-SSD was announced at the Flash Memory Summit, and positioned as a DRAM-NAND gap-filler. This makes it competition for XPoint. We asked Samsung about it, and here is what we learnt."
Here is some more Tech News from around the web:
- Players Seek 'No Man's Sky' Refunds, Sony's Content Director Calls Them Thieves @ Slashdot
- If you haven't changed your Dropbox password for 4 years, do so now @ The Register
Subject: General Tech | August 26, 2016 - 01:04 PM | Jeremy Hellstrom
Tagged: gddr6, Samsung, delay
The Inquirer offered some sad news for anyone hoping to see GDDR6 next year as Samsung is now aiming to deliver in 2018. The specifications remain the same, internal bandwidth topping out at 16Gbps, compared to GDDR5X at 12Gbps. That will translate to a maximum of 512GBps on a 256-bit memory bus, 786GBps on a 384-bit bus. Mobile devices will also appreciate the new standard as it should use around 20% less power, good news for those who buy gaming laptops.
"SAMSUNG HAS ANNOUNCED that GDDR6 memory interface technology will be introduced in 2018, not 2017 as was previously expected."
Here is some more Tech News from around the web:
- Larry Page snuffs out ‘too expensive’ Google Fiber project @ The Register
- Linus on Linux's 25th Birthday @ Slashdot
- Snapdragon 800 devices reportedly won't receive Android 7.0 update @ The Inquirer
- IoT manufacturer caught fixing security holes @ The Register
Subject: Memory | August 25, 2016 - 02:39 AM | Tim Verry
Tagged: TSV, SK Hynix, Samsung, hot chips, hbm3, hbm
Samsung and SK Hynix were in attendance at the Hot Chips Symposium in Cupertino, California to (among other things) talk about the future of High Bandwidth Memory (HBM). In fact, the companies are working on two new HBM products: HBM3 and an as-yet-unbranded "low cost HBM." HBM3 will replace HBM2 at the high end and is aimed at the HPC and "prosumer" markets while the low cost HBM technology lowers the barrier to entry and is intended to be used in mainstream consumer products.
As currently planned, HBM3 (Samsung refers to its implementation as Extreme HBM) features double the density per layer and at least double the bandwidth of the current HBM2 (which so far is only used in NVIDIA's planned Tesla P100). Specifically, the new memory technology offers up 16Gb (~2GB) per layer and as many as eight (or more) layers can be stacked together using TSVs into a single chip. So far we have seen GPUs use four HBM chips on a single package, and if that holds true with HBM3 and interposer size limits, we may well see future graphics cards with 64GB of memory! Considering the HBM2-based Tesla will have 16 and AMD's HBM-based Fury X cards had 4GB, HBM3 is a sizable jump!
Capacity is not the only benefit though. HBM3 doubles the bandwidth versus HBM2 with 512GB/s (or more) of peak bandwidth per stack! In the theoretical example of a graphics card with 64GB of HBM3 (four stacks), that would be in the range of 2 TB/s of theoretical maximum peak bandwidth! Real world may be less, but still that is many terabytes per second of bandwidth which is exciting because it opens a lot of possibilities for gaming especially as developers push graphics further towards photo realism and resolutions keep increasing. HBM3 should be plenty for awhile as far as keeping the GPU fed with data on the consumer and gaming side of things though I'm sure the HPC market will still crave more bandwidth.
Samsung further claims that HBM3 will operate at similar (~500MHz) clocks to HBM2, but will use "much less" core voltage (HBM2 is 1.2V).
Stacked HBM memory on an interposer surrounding a processor. Upcoming HBM technologies will allow memory stacks with double the number of layers.
HBM3 is perhaps the most interesting technologically; however, the "low cost HBM" is exciting in that it will enable HBM to be used in the systems and graphics cards most people purchase. There were less details available on this new lower cost variant, but Samsung did share a few specifics. The low cost HBM will offer up to 200GB/s per stack of peak bandwidth while being much cheaper to produce than current HBM2. In order to reduce the cost of production, their is no buffer die or ECC support and the number of Through Silicon Vias (TSV) connections have been reduced. In order to compensate for the lower number of TSVs, the pin speed has been increased to 3Gbps (versus 2Gbps on HBM2). Interestingly, Samsung would like for low cost HBM to support traditional silicon as well as potentially cheaper organic interposers. According to NVIDIA, TSV formation is the most expensive part of interposer fabrication, so making reductions there (and somewhat making up for it in increased per-connection speeds) makes sense when it comes to a cost-conscious product. It is unclear whether organic interposers will win out here, but it is nice to seem them get a mention and is an alternative worth looking into.
Both high bandwidth and low latency memory technologies are still years away and the designs are subject to change, but so far they are both plans are looking rather promising. I am intrigued by the possibilities and hope to see new products take advantage of the increased performance (and in the latter case lower cost). On the graphics front, HBM3 is way too far out to see a Vega release, but it may come just in time for AMD to incorporate it into its high end Navi GPUs, and by 2020 the battle between GDDR and HBM in the mainstream should be heating up.
What are your thoughts on the proposed HBM technologies?
Subject: Memory | August 20, 2016 - 01:25 AM | Tim Verry
Tagged: X99, Samsung, ripjaws, overclocking, G.Skill, ddr4, Broadwell-E
Early this week at the Intel Developer Forum in San Francisco, California G.Skill showed off new low latency DDR4 memory modules for desktop and notebooks. The company launched two Trident series DDR4 3333 MHz kits and one Ripjaws branded DDR4 3333 MHz SO-DIMM. While these speeds are not close to the fastest we have seen from them, these modules offer much tighter timings. All of the new memory modules use Samsung 8Gb chips and will be available soon.
On the desktop side of things, G.Skill demonstrated a 128GB (8x16GB) DDR4-3333 kit with CAS latencies of 14-14-14-34 running on a Asus ROG Rampage V Edition 10 motherboard with an Intel Core i7 6800K processor. They also showed a 64GB (8x8GB) kit clocked at 3333 MHz with timings of 13-13-13-33 running on a system with the same i7 6800K and Asus X99 Deluxe II motherboard.
G.Skill demonstrating 128GB DDR4-3333 memory kit at IDF 2016.
In addition to the desktop DIMMs, G.Skill showed a 32GB Ripjaws kit (2x16GB) clocked at 3333 MHz running on an Intel Skull Canyon NUC. The SO-DIMM had timings of 16-18-18-43 and ran at 1.35V.
Nowadays lower latency is not quite as important as it once was, but there is still a slight performance advantage to be had tighter timings and pure clockspeed is not the only important RAM metric. Overclocking can get you lower CAS latencies (sometimes at the cost of more voltage), but if you are not into that tedious process and are buying RAM anyway you might as well go for the modules with the lowest latencies out of the box at the clockspeeds you are looking for. I am not sure how popular RAM overclocking is these days outside of benchmark runs and extreme overclockers though to be honest.
Overclocking Innovation session at IDF 2016.
With regards to extreme overclocking, there was reportedly an "Overclocking Innovation" event at IDF where G.Skill and Asus overclocker Elmor achieved a new CPU overclocking record of 5,731.78 MHz on the i7 6950X running on a system with G.Skill memory and Asus motherboard. The company's DDR4 record of 5,189.2 MHz was not beaten at the event, G.Skill notes in its press release (heh).
Are RAM timings important to you when looking for memory? What are your thoughts on the ever increasing clocks of new DDR4 kits with how overclocking works on the newer processors/motherboards?