Introduction, How PCM Works, Reading, Writing, and Tweaks
I’ve seen a bit of flawed logic floating around related to discussions about 3D XPoint technology. Some are directly comparing the cost per die to NAND flash (you can’t - 3D XPoint likely has fewer fab steps than NAND - especially when compared with 3D NAND). Others are repeating a bunch of terminology and element names without taking the time to actually explain how it works, and far too many folks out there can't even pronounce it correctly (it's spoken 'cross-point'). My plan is to address as much of the confusion as I can with this article, and I hope you walk away understanding how XPoint and its underlying technologies (most likely) work. While we do not have absolute confirmation of the precise material compositions, there is a significant amount of evidence pointing to one particular set of technologies. With Optane Memory now out in the wild and purchasable by folks wielding electron microscopes and mass spectrometers, I have seen enough additional information come across to assume XPoint is, in fact, PCM based.
XPoint memory. Note the shape of the cell/selector structure. This will be significant later.
While we were initially told at the XPoint announcement event Q&A that the technology was not phase change based, there is overwhelming evidence to the contrary, and it is likely that Intel did not want to let the cat out of the bag too early. The funny thing about that is that both Intel and Micron were briefing on PCM-based memory developments five years earlier, and nearly everything about those briefings lines up perfectly with what appears to have ended up in the XPoint that we have today.
Some die-level performance characteristics of various memory types. source
The above figures were sourced from a 2011 paper and may be a bit dated, but they do a good job putting some actual numbers with the die-level performance of the various solid state memory technologies. We can also see where the ~1000x speed and ~1000x endurance comparisons with XPoint to NAND Flash came from. Now, of course, those performance characteristics do not directly translate to the performance of a complete SSD package containing those dies. Controller overhead and management must take their respective cuts, as is shown with the performance of the first generation XPoint SSD we saw come out of Intel:
The ‘bridging the gap’ Latency Percentile graph from our Intel SSD DC P4800X review.
(The P4800X comes in at 10us above).
There have been a few very vocal folks out there chanting 'not good enough', without the basic understanding that the first publicly available iteration of a new technology never represents its ultimate performance capabilities. It took NAND flash decades to make it into usable SSDs, and another decade before climbing to the performance levels we enjoy today. Time will tell if this holds true for XPoint, but given Micron's demos and our own observed performance of Intel's P4800X and Optane Memory SSDs, I'd argue that it is most certainly off to a good start!
A 3D XPoint die, submitted for your viewing pleasure (click for larger version).
Subject: General Tech | July 18, 2012 - 02:39 PM | Jeremy Hellstrom
Tagged: phase, phase change memory, micron, 45nm
Phase Change Memory is not new, Allyn listened to Intel talk about a breakthrough in this technology almost three years ago, but it is not common on the market. It offers two major benefits over the current RAM on the market, the first being its lack of volatility as the crystals it forms will remain even after power is cut off, the second is more dear to computer enthusiasts as it should be faster than DRAM. It may seem odd that a technology which requires the formation of crystals would be faster than the electronic flipping of bits but Micron claims that the trickle of voltage supplied creates seed crystals which speed the formation process during write cycles. The good news is that we should see real world testing soon as The Inquirer has heard that Micron has a good supply of PRAM to sell which means benchmarks are not far behind.
"MEMORY MAKER Micron has announced high volume availability of its 45nm phase change memory (PCM) chips.
Micron has been pushing the development of PCM chips with Intel for a number of years and is finally at a stage where it can offer chips to its customers. The firm announced that its 45nm PCM chips are available in a 1Gb PCM plus a 512Mb LPDDR2 package for mobile devices."
Here is some more Tech News from around the web:
- Hacking Skype for Better Teleconferencing @ Make
- Intel grazes Q2 numbers, but 'growth will be slower' in Q3 @ The Register
- Intel CEO Otellini promises $699 ultrabooks by fall @ The Register