Subject: Storage | December 22, 2016 - 04:03 PM | Allyn Malventano
Tagged: UFS 2.1, UFS, PS8313, PS8311, phison, nand, flash, controller
Following up on Micron's UFS 2.1 announcement, Phison has announced the launch of their own PS8311 UFS 2.1 controller:
For those unaware, UFS 2.1 is a much-anticipated replacement for eMMC, which is the equivalent of trying to run your laptop OS off of an SD Card. Fortunately, eMMC only appears in budget systems, but the transition to UFS 2.1 should bring the storage performance bar up considerably in those systems.
UFS Architecture Overview. Source: JEDEC
Devices following the Universal Flash Storage standard will enable less protocol overhead and more direct communication with the flash.
Looking at an older roadmap, we see Phison was relatively on target with the PS8311, with a faster PS8313 scheduled for later in 2017.
Introduction, Specifications and Packaging
Earlier this year we covered the lower two capacities of the Samsung 750 EVO. We had some requests for a review of the 500GB model as soon as it was added to their lineup, and Samsung promptly sent a sample, but I delayed that review in the interest of getting the full 750 EVO lineup tested under our new storage test suite. I've been running batches of SSDs through this new suite, and we now have enough data points to begin cranking out some reviews. The 750 EVO was at the head of the line, so we will be starting with it first. I'm 'reissuing' our review as a full capacity roundup of the 750 EVO lineup as these are fresh results on a completely new test suite.
These are the 'Rev. 2' specifications from Samsung, which include the 500GB model of the 750 EVO. The changes are not significant, mainly a slight bump to random performance of the top capacity model along with a changeover to lower power DDR3 (of twice the capacity) for the 500GB model's system cache.
Nothing new here. This is the standard Samsung packaging for their SATA products.
Subject: Editorial | December 15, 2016 - 02:18 PM | AlexL
Tagged: podcast, zalman, ryzen, note 7, nand, LG, instinct, hdr, DRM, doom, amd
PC Perspective Podcast #428 - 12/8/16
Join us this week as we discuss AMD ReLive, Ryzen, Zalman Keyboards, LG HDR monitors and more!
The URL for the podcast is: http://pcper.com/podcast - Share with your friends!
- iTunes - Subscribe to the podcast directly through the iTunes Store (audio only)
- Google Play - Subscribe to our audio podcast directly through Google Play!
- RSS - Subscribe through your regular RSS reader (audio only)
- MP3 - Direct download link to the MP3 file
Hosts: Allyn Malventano, Josh Walrath, Jeremy Hellstrom, Sebastian Peak
Program length: 1:17:34
Podcast topics of discussion:
Week in Review:
News items of interest:
Hardware/Software Picks of the Week
Subject: General Tech | December 13, 2016 - 12:42 PM | Jeremy Hellstrom
Tagged: 3d nand, price increase, nand
DRAMeXchange is predicting a price hike in NAND chips over the coming year thanks to a supply decline combined with an impressive rise in demand. The supply decline is a direct result of the industry's switch in preference to 3D NAND, which requires manufacturers to retool their existing lines. While retooling from the production of 2D to 3D NAND, the line can produce neither and as all available lines were currently at or near full volume production, we are seeing a decline in the amount of available flash chips. Even once lines are retooled, only Samsung has seen an increase in their production volumes, a situation which will hopefully change in the coming year. With demand on the rise as more and more users switch to SSDs and the amount of storage on cellphones increasing in each new model we can only expect to see prices rise. DigiTimes reports a predicted 10% rise in average SSD prices in Q1 of 2017, with prices of eMMC and UFS storage jumping even more.
"From the supply side, the industry-wide transition to 3D-NAND is now moving at full speed," said Sean Yang, research director of DRAMeXchange. "However, most suppliers with the exception of Samsung have not improve their yield rates for the technology as quickly as they would like."
Here is some more Tech News from around the web:
- Botched Microsoft update knocks Windows 8, 10 PCs offline – regardless of ISP @ The Register
- Someone just chucked another $21 million at carbon nanotube memory techies @ The Register
- Google reportedly puts brakes on self-driving car development @ The Inquirer
- Apple quietly releases delayed AirPods; shipping times slip to four weeks @ Ars Technica
- P0wnographer finds remote code exec bug in McAfee enterprise @ The Register
- KFC regulars may get an order of phish with their chicken @ The Inquirer
- Smart Home Automation Review – Taking Control of Your Home @ eTeknix
- Guide to the Open Cloud: The State of IaaS and PaaS @ Linux.com
- Enter for a chance to win consoles, games, and more in the 2016 Ars Charity Drive
Subject: Storage | August 11, 2016 - 12:06 PM | Allyn Malventano
Tagged: FMS, FMS 2016, XPoint, micron, QuantX, nand, ram
Earlier this week, Micron launched their QuantX branding for XPoint devices, as well as giving us some good detail on expected IOPS performance of solutions containing these new parts:
Thanks to the very low latency of XPoint, the QuantX solution sees very high IOPS performance at a very low queue depth, and the random performance very quickly scales to fully saturate PCIe 3.0 x4 with only four queued commands. Micron's own 9100 MAX SSD (reviewed here), requires QD=256 (64x increase) just to come close to this level of performance! At that same presentation, a PCIe 3.0 x8 QuantX device was able to double that throughput at QD=8, but what are these things going to look like?
The real answer is just like modern day SSDs, but for the time being, we have the prototype unit pictured above. This is essentially an FPGA development board that Micron is using to prototype potential controller designs. Dedicated ASICs based on the final designs may be faster, but those take a while to ramp up volume production.
So there it is, in the flesh, nicely packaged and installed on a complete SSD. Sure it's a prototype, but Intel has promised we will see XPoint before the end of the year, and I'm excited to see this NAND-to-DRAM performance-gap-filling tech come to the masses!
Subject: Storage | August 10, 2016 - 02:00 PM | Allyn Malventano
Tagged: 2.5, V-NAND, ssd, Samsung, nand, FMS 2016, FMS, flash, 64-Layer, 32TB, SAS, datacenter
..now this picture has been corrected for extreme parallax and was taken in far from ideal conditions, but you get the point. Samsung's keynote is coming up later today, and I have a hunch this will be a big part of what they present. We did know 64-Layer was coming, as it was mentioned in Samsung's last earnings announcement, but confirmation is nice.
*edit* now that the press conference has taken place, here are a few relevant slides:
With 48-Layer V-NAND announced last year (and still rolling out), it's good to see Samsung pushing hard into higher capacity dies. 64-Layer enables 512Gbits (64GB) per die, and 100MB/s per die maximum throughput means even lower capacity SSDs should offer impressive sequentials.
Samsung 48-Layer V-NAND. Pic courtesy of TechInsights.
We will know more shortly, but for now, dream of even higher capacity SSDs :)
*edit* and this just happened:
*additional edit* - here's a better picture taken after the keynote:
The 32TB model in their 2.5" form factor displaces last years 16TB model. The drive itself is essentially identical, but the flash packages now contain 64-layer dies, doubling the available capacity of the device.
Subject: Storage | August 9, 2016 - 05:59 PM | Allyn Malventano
Tagged: XPoint, Worm, storage, ssd, RocksDB, Optane, nand, flash, facebook
At their FMS 2016 Keynote, Facebook gave us some details on the various storage technologies that fuel their massive operation:
In the four corners above, they covered the full spectrum of storing bits. From NVMe to Lightning (huge racks of flash (JBOF)), to AVA (quad M.2 22110 NVMe SSDs), to the new kid on the block, WORM storage. WORM stands for Write Once Read Many, and as you might imagine, Facebook has lots of archival data that they would like to be able to read quickly, so this sort of storage fits the bill nicely. How do you pull off massive capacity in flash devices? QLC. Forget MLC or TLC, QLC stores four bits per cell, meaning there are 16 individual voltage states for each cell. This requires extremely precise writing techniques and reads must appropriately compensate for cell drift over time, and while this was a near impossibility with planar NAND, 3D NAND has more volume to store those electrons. This means one can trade the endurance gains of 3D NAND for higher bit density, ultimately enabling SSDs upwards of ~100TB in capacity. The catch is that they are rated at only ~150 write cycles. This is fine for archival storage requiring WORM workloads, and you still maintain NAND speeds when it comes to reading that data later on, meaning that decade old Facebook post will appear in your browser just as quickly as the one you posted ten minutes ago.
Next up was a look at some preliminary Intel Optane SSD results using RocksDB. Compared to a P3600, the prototype Optane part offers impressive gains in Facebook's real-world workload. Throughput jumped by 3x, and latency reduced to 1/10th of its previous value. These are impressive gains given this fairly heavy mixed workload.
More to follow from FMS 2016!
Subject: Storage | August 9, 2016 - 03:33 PM | Allyn Malventano
Tagged: XPoint, QuantX, nand, micron
Micron just completed their keynote address at Flash Memory Summit, and as part of the presentation, we saw our first look at some raw scaled Queue Depth IOPS performance figures from devices utilizing XPoint memory:
These are the performance figures from an U.2 device with a PCIe 3.0 x4 link. Note the outstanding ramp up to full saturation of the bus at a QD of only 4. Slower flash devices require much more parallelism and a deeper queue to achieve sufficient IOPS throughput to saturate that same bus. That 'slow' device on the bottom there, I'm pretty certain, is Micron's own 9100 MAX, which was the fastest thing we had tested to date, and it's being just walked all over by this new XPoint prototype!
Ok, so that's damn fast, but what if you had an add in card with PCIe 3.0 x8?
Ok, now that's just insane! While the queue had to climb to ~8 to reach these figures, that's 1.8 MILLION IOPS from a single HHHL add in card. That's greater than 7 GB/s worth of 4KB random performance!
In addition to the crazy throughput and IOPS figures, we also see latencies running at 1/10th that of flash-based NVMe devices.
..so it appears that while the cell-level performance of XPoint boasts 1000x improvements over flash, once you implement it into an actual solution that must operate within the bounds of current systems (NVMe and PCIe 3.0), we currently get only a 10x improvement over NAND flash. Given how fast NAND already is, 10x is no small improvement, and XPoint still opens the door for further improvement as the technology and implementations mature over time.
More to follow as FMS continues!
Subject: Storage | August 1, 2016 - 03:14 PM | Sebastian Peak
Tagged: M8PeG, ssd, solid state drive, preview, plextor, nand, M8Pe, M.2, CES 2016, M8PeY
Plextor announced their first M.2 SSD at CES 2016, and now the M8Pe series is officially set for a release this month. Computer Base (German language) had a chance to preview the new drive, and supplied a detailed look at the M.2 version (this is model M8PeG, and the version with a riser card is M8PeY).
The Plextor M8PeG SSD (Image credit: Computer Base)
Even the M.2 form-factor version of the SSD includes a heatsink, which Plextor warns creates incompatibility with notebooks as the M8PeG is 4.79 mm in height with the heatsink in place.
Specifications for the drives are as follows:
|Plextor M8PeG||Plextor M8PeY|
|Controller||Marvell 88SS1093 (8-Channel)|
|DRAM||512MB LPDDR3 (1024MB variant)|
|Capacity||128 GB, 256 GB, 512 GB|
|NAND||Toshiba 15nm Toggle 2.0 MLC|
|Form Factor||M.2 (80 mm)||PCIe card (HH, HL)|
|Interface||PCIe 3.0 x4|
So what did Computer Base have to report with their hands-on preview of the new drive? Here's their CrystalDiskMark result:
(Image credit: Computer Base)
Naturally we'll have to wait for a full-scale AllynReview™ to get a better idea of performance in all situations, but until then it's good to know we'll soon have another option to consider in the M.2 SSD market. As to pricing, we don't have anything just yet.
The M8Pe SSD lineup (Image credit: Computer Base)
Pre and Post Update Testing
Samsung launched their 840 Series SSDs back in May of 2013, which is over three years ago as of this writing. They were well-received as a budget unit but rapidly eclipsed by the follow-on release of the 840 EVO.
A quick check of our test 840 revealed inconsistent read speeds.
We broke news of Samsung’s TLC SSDs being effected by a time-based degrading of read speeds in September of 2014, and since then we have seen nearly every affected product patched by Samsung, with one glaring exception - the original 840 SSD. While the 840 EVO was a TLC SSD with a built-in SLC static data cache, the preceding 840 was a pure TLC drive. With the focus being on the newer / more popular drives, I had done only spot-check testing of our base 840 sample here at the lab, but once I heard there was finally a patch for this unit, I set out to do some pre-update testing so that I could gauge any improvements to read speed from this update.
As a refresher, ‘stale’ data on an 840 EVO would see reduced read speeds over a period of months after those files were written to the drive. This issue was properly addressed in a firmware issued back in April of 2015, but there were continued grumbles from owners of other affected drives, namely the base model 840. With the Advanced Performance Optimization patch being issued so long after others have been patched, I’m left wondering why there was such a long delay on this one? Differences in the base-840’s demonstration of this issue revealed themselves in my pre-patch testing: