Subject: General Tech | March 11, 2019 - 08:50 AM | Jim Tanous
Tagged: video, usb4, Threadripper, swiftech, RTX 2060, radeon vii, podcast, mx518, MK730, logitech, GOG, evga, eUFS, diablo
PC Perspective Podcast #535 - 3/7/2019
Editor's Note: Our apologies for the delayed release of this week's podcast. We had an increasingly catastrophic storage disaster that required some lengthy data recovery. But we're back up and running and thankfully lost nothing but a bit of time.
With that out of the way, join us for a look at the EVGA RTX 2060 Ultra, the Cooler Master MK730 mechanical gaming keyboard, a pricey CPU water block from Swiftech, the latest USB news, and more!
Subscribe to the PC Perspective Podcast
Check out previous podcast episodes: http://pcper.com/podcast
00:00:06 - Intro
00:07:19 - Review: EVGA RTX 2060 XC Ultra
00:24:01 - Review: Cooler Master MK730 Mechanical Keyboard
00:29:49 - Review: Swiftech Apogee SKF Heirloom Water Block
00:33:12 - News: USB4
00:40:53 - News: Third-Gen Threadripper & Navi Details
00:47:33 - News: RTX Triple-Threat Bundle & 419.35 Drivers
00:51:01 - News: Radeon VII Undervolting
01:01:29 - News: Windows Retpoline Optimizations & Game Breakers
01:06:09 - News: Intel CPU SPOILER Vulnerability
01:14:26 - News: GPU Price Cuts?
01:20:03 - News: Samsung eUFS 3.0 Mobile Storage
01:28:36 - News: HoloLens 2
01:32:54 - Picks of the Week
Subject: General Tech | March 5, 2019 - 11:05 AM | Tim Verry
Tagged: V-NAND, smartphone, Samsung, eUFS
Samsung has begun mass production of its latest V-NAND based mobile storage solution. Conforming to the eUFS 3.0 standard, Samsung’s latest chips pair eight layers of 512Gb dies with a high-performance controller into a tiny 512 GB chip suitable for thin phones and tablets.
Samsung claims its eUFS (embedded Universal Flash Storage) 3.0 chips offer up to twice the sequential performance of previous generation eUFS 2.1 storage and 20-times the performance of a typical micro SD card (~100 IOPS though some are faster). Specifically, the 512GB eUFS 3.0 chip offers up to 2,100 MB/s sequential read, 410 MB/s sequential write, 63,000 random read, and 68,000 random write speeds. The chart below compares eUFS 3.0, eUFS 2.1, eMMC 5.1, and a M.2 NVMe SSD.
|Samsung eUFS 3.0||Samsung 1TB eUFS 2.1||Samsung 512GB eUFS 2.0||MyDigitalSSD SBX M.2 NVMe||eMMC 5.1|
|Sequential Read||2,100 MB/s||1,000 MB/s||860 MB/s||1,600 MB/s||250 MB/s|
|Sequential Write||410 MB/s||260 MB/s||255 MB/s||1,300 MB/s||125 MB/s|
|Random Read IOPS||63,000||58,000||42,000||240,000+||11,000|
|Random Write IOPS||68,000||50,000||40,000||180,000+||13,000|
eUFS 3.0, eUFS 2.1, and eMMC 5.1 numbers courtesy Samsung. NVME PCI-E x2 SSD numbers are from PC Perspective in our review of the drive. For further comparison typical modern SATA SSD tend to be around 550 MB/s for sequentials and 95,000 IOPS.
Smartphone and tablets utilizing eUFS 3.0 should end up being notably faster than previous storage solutions. Interestingly, Samsung has managed to pull off sequential read performance that rivals much larger multi-chip NVME PCI-E x2 M.2 solid state drives though writes do not come close to those drives due to the number of chips/channels being much higher on the M.2 form factor whereas the eUFS 3.0 is limited to a single chip and limited layers to spread writes across. Random read and write performance is respectable with eUFS 3.0 but again not anywhere close to PCI-E/NVMe M.2 drives. Compared to a SATA SSD however, eUFS 3.0 looks much better offering significantly faster sequential reads (writes are fairly low to be competitive though) and with random performance that starts to approach budget and/or low capacity SATA SSD performance. That’s not to say computer users should give up M.2 for eUFS, of course, but that smartphone storage is rapidly improving and starting to close the gap between the platforms / form factors.
Samsung will be launching 512 GB and 128 GB eUFS 3.0 chips imminently with 1 TB and 256 GB chips to follow in the second half of 2019. We may have to wait until next year to see the new eUFS 3.0 standard catch on with most smartphones launching in 2019 already announced last month at Mobile World Congress. It is possible that some of those phones will use the faster internal storage, like Samsung’s own Galaxy Fold, but most will likely be based on eUFS 2.1.
Subject: General Tech, Mobile | January 30, 2019 - 12:40 PM | Jeremy Hellstrom
Tagged: Terabyte, Samsung, eUFS, 1TB, smartphones
Samsung wants to make sure you don't run out of space on your phone by upping their game and providing 1TB of embedded Universal Flash Storage on a single chip. The new chip is physically similar to the current 512GB version, so you won't have to buy a phablet to download all your 4K cat videos for offline viewing. They have also increased speeds at the same time, as we have become accustomed to with other flash storage, with Ars Technica reporting sequential reads of up to 1,000Mbps.
Rumour has it we might see this as a choice in the upcoming Galaxy S10.
"The 1TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices," said Cheol Choi, executive vice president of Memory Sales and Marketing at Samsung."
Here is some more Tech News from around the web:
- Trying to log into Office 365 right now? It's a coin flip, says Microsoft: Service goes TITSUP as Azure portal wobbles @ The Register
- Microsoft decides Internet Explorer 10 has had its fun: Termination set for January 2020 @ The Register
- TSMC advanced-node chip lead-time shortened @ DigiTimes
- People aren't exactly flocking to the Windows 10 October Update @ The Inquirer
- iRobot Unveils Terra, a Roomba Lawn Mower @ Slashdot
Subject: Storage | February 8, 2018 - 08:04 AM | Tim Verry
Tagged: UFS, Samsung, eUFS, embedded, automotive, adas, 256GB
Samsung announced yesterday that it has begun mass production of 256 GB eUFS (Embedded Universal Flash Storage) flash storage for embedded automotive applications. Doubling the capacity of the 128GB eUFS flash it announced last fall, the new embedded flash conforms to the newer JEDEC eUFS 3.0 standard including the new temperature monitoring and thermal throttling safety features which Samsung reportedly had a hand in developing. The new embedded storage is aimed at smart vehicles for use in driver assistance features (ADAS), infotainment systems, and next-generation dashboards.
The new eUFS 3.0 compliant flash is notable for featuring increased temperature ranges of between -40°C and 105°C for both operational and idle/power saving modes which makes it much better suited for use in vehicles where temperature extremes can be reach both from extreme weather and engine heat. Samsung compares its eUFS flash with traditional eMMC 5.1 storage which has a temperature range of only -25°C to 85°C when in use and -40°C to 85°C when in power saving mode.
Samsung’s eUFS can hit sequential read speeds of up to 850 MB/s and random read performance of up to 45,000 IOPS. Samsung did not specify write performance numbers but based on its other eUFS flash sequential and random writes should be in the neighborhood of 250 MB/s and 40,000 IOPS respectively. According to Samsung in its press material for 512GB eUFS for smartphones, the 256GB eUFS for the automotive market is composed of 8 stacks of 48-layer 256Gb V-NAND and a controller all packaged together to hit the 256GB storage capacity. Samsung has included a temperature sensor in the flash along with the ability for the controller to notify the host AP (application processor) at any pre-set temperature thresholds to enable the AP to downclock to lower power and heat to acceptable levels. The temperature monitoring hardware is intended to help protect the heat sensitive NAND flash from extreme temperatures to improve data reliability and longevity. The eUFS flash also features a “data refresh” feature that improves long term performance by relocating older data to less-often used cells. Embedded Universal Flash Storage (eUFS) is interesting compared to eMMC for more than temperatures though as it uses a dual channel LVDS serial interface that allows it to operate in full duplex mode rather than the half duplex mode of eMMC with its x8 parallel interface. This means that eUFS can be read and written to simultaneously and with the addition of command queueing, the controller is able to efficiently execute and prioritize read/write operations and perform error correction without involving the host processor and software.
I am looking forward to the advancements in eUFS storage and its use in more performant mobile devices and vehicles, especially on the low end in tablets and notebooks where eMMC is currently popular.