Subject: General Tech | April 9, 2018 - 11:20 PM | Tim Verry
Tagged: micron, manufacturing, IMFT NAND, flash memory, fab, cleanroom, 64-Layer, 3d nand
Micron Technologies recently began construction on a multi-billion-dollar cleanroom facility for research and development of its 3D NAND technologies. The new facility is being built adjacent to Micron’s existing NAND fabrication complex at 1 North Coast Drive where Micron invested $4 Billion to expand in 2016. Micron did not disclose its exact investment in the new cleanroom space except to say that it was a multi-billion-dollar project.
Micron’s expanded 300mm 3D NAND manufacturing complex is part of its NAND Center of Excellence, and the new facility that is under construction will expand the company’s ability to increase its research and development efforts and allow Micron to push “even more intricate designs” according to Sanjay Mehrotra (Micron President and CEO). for its 3D flash memory. The new facility will be staffed by the new hires which will mainly be engineers and technicians specializing in 3D NAND manufacturing and will include as many as 600 fresh graduates.
Construction of the new manufacturing and cleanroom space is slated for completion in mid-2019 with initial wafer output by the fourth quarter of next year. Unfortunately, this facility is not intended to add additional wafer capacity (at least at this time) so those hoping for increased supply of NAND chips and cheaper SSDs will have to keep waiting. Rather, this facility is going to be used for R&D and its manufacturing will be used to produce more advanced flash and experiment with new manufacturing methods for increasingly complicated stacked and denser die designs instead of beefing up supply of its current memory chips that are being used in current products.
Satellite view of Micron's existing 300mm NAND fabrication facility in northern Singapore.
Along with the new 3D NAND facility, Micron will be adding 1,000 new jobs to its existing workforce in Singapore of 7,500 over the next five years per a deal with Singapore’s Economic Development Board. Business Times and Channel News Asia note that over the past 20 years Micron has invested heavily in Singapore – north of $20 billion.
I am glad to see Micron pushing forward with its 3D NAND especially following the breakup with Intel wherein the two companies have decided to complete the development of third generation 3D NAND together and then to develop 3D NAND independently. Interestingly, Intel and Micron did not totally dissolve the IMFT joint venture as they will continue collaborating on 3D XPoint at the fab in Lehi, Utah which according to Intel is now entirely focused on XPoint memory. That was something I was curious about when first reading of the breakup early this year and happened to come across when writing this story. That press release notes that Intel and Micron are currently producing second generation 64-layer IMFT flash and developing higher density third generation flash which is slated for production next year (after which Micron and Intel will go their separate ways on NAND), so this may be a major reason for Micron building out new multi-billion-dollar fab space for NAND R&D.
Introduction, Specifications and Packaging
Samsung launched their 850 line of SSDs in mid-2014 (over three years ago now). The line evolved significantly over time, with the additions of PRO and EVO models, capacity expansions reaching up to 4TB, and a later silent migration to 64-layer V-NAND. Samsung certainly got their money's worth out of the 850 name, but it is now time to move onto something newer:
Of note above is a significantly higher endurance rating as compared to the 850 Series products, along with an update to a new 'MJX' controller, which accounts for a slight performance bump across the board. Not mentioned here is the addition of queued TRIM, which is more of a carryover from the enterprise / Linux systems (Windows 10 does not queue its TRIM commands).
Aside from some updated specs and the new name, packaging remains very much the same.
Read on for our review of the Samsung 860 PRO and EVO SSDs (in multiple capacities!)
(Those of you interested in Samsung's press release for this launch will find it after the break)
Subject: Storage, Shows and Expos | August 8, 2017 - 05:37 PM | Allyn Malventano
Tagged: z-ssd, vnand, V-NAND, Samsung, QLC, FMS 2017, 64-Layer, 3d, 32TB, 1Tbit
As is typically the case for Flash Memory Summit, the Samsung keynote was chock full of goodies:
Samsung kicked off by stating there are a good 5 years of revisions left in store for their V-NAND line, each with a corresponding increase in speed and capacity.
While V-NAND V4 was 64-layer TLC, V5 is a move to QLC, bringing per die capacity to 1Tbit (128 GB per die).
If you were to stack 32 of these new V5 dies per package, and do so in a large enough 2.5" housing, that brings the maximum capacity of such a device to a whopping 128TB!
Samsung also discussed a V2 of their Z-NAND, moving from SLC to MLC while only adding 2-3 us of latency per request. Z-NAND is basically a quicker version of NAND flash designed to compete with 3D XPoint.
M.2 SSDs started life with the working title of NGFF. Fed up with the limitations of this client-intended form factor for the enterprise, Samsung is pushing a slightly larger NGSFF form factor that supports higher capacities per device. Samsung claimed a PM983 NGSFF SSD will hold 16TB, a 1U chassis full of the same 576TB, and a 2U chassis pushing that figure to 1.15PB.
Last up is 'Key Value'. This approach allows the flash to be accessed more directly by the application layer, enabling more efficient use of the flash and therefore higher overall performance.
There were more points brought up that we will be covering later on, but for now here is the full press release that went out during the keynote: (after the break)
Subject: Storage | July 24, 2017 - 05:01 PM | Jeremy Hellstrom
Tagged: toshiba, ssd, ocz, NVMe, nand, M.2, XG5, BiCS, 64-Layer
We first saw Toshiba's XG5 M.2 SSD at Computex this year but as of yet we have not had a chance to review it. The Tech Report on the other hand did get their mitts on the 512GB model of this drive and they put it through its paces in this review right here. Their results show a drive that beats OCZs' RD400 across the board and is impinging on Samsung's 960 Pro and EVO, though they are not quite there yet. The next generation will improve on performance which should spur Samsung to new heights with their next NVMe product. At the start of the article is some history on the current state of Toshiba which is worth checking out if you are not familiar with what is going on there.
"Toshiba's XG5 NVMe SSD is shipping to the company's OEM partners now. We run it through our test suite to see if the company's newfangled 64-layer BiCS NAND helps it compete with the best in the business."
Here are some more Storage reviews from around the web:
- HP SSD S700 @ Benchmark Reviews
- Apacer Z280 M.2 PCIe 240GB SSD Review @ NikKTech
- The 8TB WD Gold Datacenter Drive @ TechARP
Subject: Storage | June 28, 2017 - 02:12 PM | Jeremy Hellstrom
Tagged: Toshiba XG5, toshiba, ssd, NVMe, nand, M.2, BiCS, 64-Layer
We first heard about the Toshiba XG5 1TB NVMe SSD at Computex, with its 64 layer BiCS flash and stated read speeds of 3GB/s, writes just over 2 GB/s. Today Kitguru published a review of the new drive, including ATTO results which match and even exceed the advertised read and write speeds. Their real world test involved copying 30GB of movies off of a 512GB Samsung 950 Pro to the XG5, only Samsung's new 960 lineup and the OCZ RD400 were able to beat Toshiba's new SSD. Read more in their full review, right here.
"The Toshiba XG5 1TB NVMe SSD contains Toshiba's newest 3D 64-Layer BiCS memory and our report will examine Toshiba's newest memory, as well as their newest NVMe controller to go along with it."
Here are some more Storage reviews from around the web:
- Toshiba N300 8TB HDD @ Kitguru
- Kingston Gold Series UHS-1 Speed Class 3 64GB MicroSDXC @ Modders-Inc
- Kingston DataTraveler Ultimate GT 2TB USB 3.1 Gen 1 Flash Drive Review @ NikKTech
- Drobo 5D3 DAS Review (Thunderbolt 3) @ Kitguru
- LaCie 2TB Rugged Thunderbolt USB-C Professional All-Terrain Mobile Storage Review @ NikKTech
Introduction, Specifications and Packaging
Today Intel is launching a new line of client SSDs - the SSD 545S Series. These are simple, 2.5" SATA parts that aim to offer good performance at an economical price point. Low-cost SSDs is not typically Intel's strong suit, mainly because they are extremely rigorous on their design and testing, but the ramping up of IMFT 3D NAND, now entering its second generation stacked to 64-layers, should finally help them get the cost/GB down to levels previously enjoyed by other manufacturers.
Intel and Micron jointly announced 3D NAND just over two years ago, and a year ago we talked about the next IMFT capacity bump coming as a 'double' move. Well, that's only partially happening today. The 545S line will carry the new IMFT 64-layer flash, but the capacity per die remains the same 256Gbit (32GB) as the previous generation parts. The dies will be smaller, meaning more can fit on a wafer, which drives down production costs, but the larger 512Gbit dies won't be coming until later on (and in a different product line - Intel told us they do not intend to mix die types within the same lines as we've seen Samsung do in the past).
There are no surprises here, though I am happy to see a 'sustained sequential performance' specification stated by an SSD maker, and I'm happier to see Intel claiming such a high figure for sustained writes (implying this is the TLC writing speed as the SLC cache would be exhausted in sustained writes).
I'm also happy to see sensical endurance specs for once. We've previously seen oddly non-scaling figures in prior SSD releases from multiple companies. Clearly stating a specific TBW 'per 128GB' makes a lot of sense here, and the number itself isn't that bad, either.
Simplified packaging from Intel here, apparently to help further reduce shipping costs.
Subject: Storage | May 30, 2017 - 09:00 AM | Allyn Malventano
Tagged: toshiba, ssd, ocz, NVMe, nand, M.2, computex 2017, BiCS, 64-Layer
Last night we saw WD launch the first client SSDs with 64-layer NAND Flash, but recall that WD/SanDisk is in partnership with Toshiba to produce this new gen 3 BiCS memory, which means Toshiba is also launching their own product wrapped around this new high-density flash:
Enter the Toshiba XG5. It is certainly coming on strong here, as evidenced by the specs:
Unlike the WD/SanDisk launch, the BiCS flash on this Toshiba variant sits behind an NVMe SSD controller, with stated read speeds at 3GB/s and writes just over 2 GB/s. We don't yet have random performance figures, but we expect it to certainly be no slouch given the expected performance of this newest generation of flash memory. Let's take a quick look at some of the high points there:
Alright, so we have the typical things you'd expect, like better power efficiency and higher endurance, but there is a significant entry there under the performance category - 1-shot, full sequence programming. This is a big deal, since writing to flash memory is typically done in stages, with successive program cycles nudging cell voltages closer to their targets with each pass. This takes time and is one of the main things holding back the write speeds of NAND flash. This new BiCS is claimed to be able to successfully write in a single program cycle, which should translate to noticeable improvements in write latency.
Another thing helping with writes is that the XG5 will have its BiCS flash operating in a hybrid mode, meaning these are TLC SSDs with an SLC cache. We do not have confirmed cache sizes to report, but it's a safe bet that they will be similar to competing products.
We don't yet have pricing info, but we do know that the initial capacity offerings will start with 256GB, 512GB, and 1TB offerings. The XG5 is launching in the OEM channel in the second half of 2017. While this one is an OEM product, remember that OCZ is Toshiba's brand for client SSDs, so there's a possibility we may see a retail variant appear under that name in the future.
Subject: Storage | August 10, 2016 - 02:00 PM | Allyn Malventano
Tagged: 2.5, V-NAND, ssd, Samsung, nand, FMS 2016, FMS, flash, 64-Layer, 32TB, SAS, datacenter
..now this picture has been corrected for extreme parallax and was taken in far from ideal conditions, but you get the point. Samsung's keynote is coming up later today, and I have a hunch this will be a big part of what they present. We did know 64-Layer was coming, as it was mentioned in Samsung's last earnings announcement, but confirmation is nice.
*edit* now that the press conference has taken place, here are a few relevant slides:
With 48-Layer V-NAND announced last year (and still rolling out), it's good to see Samsung pushing hard into higher capacity dies. 64-Layer enables 512Gbits (64GB) per die, and 100MB/s per die maximum throughput means even lower capacity SSDs should offer impressive sequentials.
Samsung 48-Layer V-NAND. Pic courtesy of TechInsights.
We will know more shortly, but for now, dream of even higher capacity SSDs :)
*edit* and this just happened:
*additional edit* - here's a better picture taken after the keynote:
The 32TB model in their 2.5" form factor displaces last years 16TB model. The drive itself is essentially identical, but the flash packages now contain 64-layer dies, doubling the available capacity of the device.