FMS 2017: Samsung Announces QLC V-NAND, 16TB NGSFF SSD, Z-SSD V2, Key Value

Subject: Storage, Shows and Expos | August 8, 2017 - 05:37 PM |
Tagged: z-ssd, vnand, V-NAND, Samsung, QLC, FMS 2017, 64-Layer, 3d, 32TB, 1Tbit

As is typically the case for Flash Memory Summit, the Samsung keynote was chock full of goodies:

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Samsung kicked off by stating there are a good 5 years of revisions left in store for their V-NAND line, each with a corresponding increase in speed and capacity.

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While V-NAND V4 was 64-layer TLC, V5 is a move to QLC, bringing per die capacity to 1Tbit (128 GB per die).

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If you were to stack 32 of these new V5 dies per package, and do so in a large enough 2.5" housing, that brings the maximum capacity of such a device to a whopping 128TB!

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Samsung also discussed a V2 of their Z-NAND, moving from SLC to MLC while only adding 2-3 us of latency per request. Z-NAND is basically a quicker version of NAND flash designed to compete with 3D XPoint.

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M.2 SSDs started life with the working title of NGFF. Fed up with the limitations of this client-intended form factor for the enterprise, Samsung is pushing a slightly larger NGSFF form factor that supports higher capacities per device. Samsung claimed a PM983 NGSFF SSD will hold 16TB, a 1U chassis full of the same 576TB, and a 2U chassis pushing that figure to 1.15PB.

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Last up is 'Key Value'. This approach allows the flash to be accessed more directly by the application layer, enabling more efficient use of the flash and therefore higher overall performance.

There were more points brought up that we will be covering later on, but for now here is the full press release that went out during the keynote: (after the break)

A new challenger appears; Toshiba's XG5 is hot on Samsung's heels

Subject: Storage | July 24, 2017 - 05:01 PM |
Tagged: toshiba, ssd, ocz, NVMe, nand, M.2, XG5, BiCS, 64-Layer

We first saw Toshiba's XG5 M.2 SSD at Computex this year but as of yet we have not had a chance to review it.  The Tech Report on the other hand did get their mitts on the 512GB model of this drive and they put it through its paces in this review right here.  Their results show a drive that beats OCZs' RD400 across the board and is impinging on Samsung's 960 Pro and EVO, though they are not quite there yet.  The next generation will improve on performance which should spur Samsung to new heights with their next NVMe product.  At the start of the article is some history on the current state of Toshiba which is worth checking out if you are not familiar with what is going on there.

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"Toshiba's XG5 NVMe SSD is shipping to the company's OEM partners now. We run it through our test suite to see if the company's newfangled 64-layer BiCS NAND helps it compete with the best in the business."

Here are some more Storage reviews from around the web:

Storage

Toshiba's new 64 layer NVMe drive takes the cake

Subject: Storage | June 28, 2017 - 02:12 PM |
Tagged: Toshiba XG5, toshiba, ssd, NVMe, nand, M.2, BiCS, 64-Layer

We first heard about the Toshiba XG5 1TB NVMe SSD at Computex, with its 64 layer BiCS flash and stated read speeds of 3GB/s, writes just over 2 GB/s.  Today Kitguru published a review of the new drive, including ATTO results which match and even exceed the advertised read and write speeds.  Their real world test involved copying 30GB of movies off of a 512GB Samsung 950 Pro to the XG5, only Samsung's new 960 lineup and the OCZ RD400 were able to beat Toshiba's new SSD.  Read more in their full review, right here.

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"The Toshiba XG5 1TB NVMe SSD contains Toshiba's newest 3D 64-Layer BiCS memory and our report will examine Toshiba's newest memory, as well as their newest NVMe controller to go along with it."

Here are some more Storage reviews from around the web:

Storage

Subject: Storage
Manufacturer: Intel

Introduction, Specifications and Packaging

Introduction

Today Intel is launching a new line of client SSDs - the SSD 545S Series. These are simple, 2.5" SATA parts that aim to offer good performance at an economical price point. Low-cost SSDs is not typically Intel's strong suit, mainly because they are extremely rigorous on their design and testing, but the ramping up of IMFT 3D NAND, now entering its second generation stacked to 64-layers, should finally help them get the cost/GB down to levels previously enjoyed by other manufacturers.

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Intel and Micron jointly announced 3D NAND just over two years ago, and a year ago we talked about the next IMFT capacity bump coming as a 'double' move. Well, that's only partially happening today. The 545S line will carry the new IMFT 64-layer flash, but the capacity per die remains the same 256Gbit (32GB) as the previous generation parts. The dies will be smaller, meaning more can fit on a wafer, which drives down production costs, but the larger 512Gbit dies won't be coming until later on (and in a different product line - Intel told us they do not intend to mix die types within the same lines as we've seen Samsung do in the past).

Specifications

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There are no surprises here, though I am happy to see a 'sustained sequential performance' specification stated by an SSD maker, and I'm happier to see Intel claiming such a high figure for sustained writes (implying this is the TLC writing speed as the SLC cache would be exhausted in sustained writes).

I'm also happy to see sensical endurance specs for once. We've previously seen oddly non-scaling figures in prior SSD releases from multiple companies. Clearly stating a specific TBW 'per 128GB' makes a lot of sense here, and the number itself isn't that bad, either.

Packaging

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Simplified packaging from Intel here, apparently to help further reduce shipping costs.

Read on for our full review of the Intel 545S 512GB SSD!

Computex 2017: Toshiba Launches XG5 NVMe Client SSD With 64-Layer BiCS Flash

Subject: Storage | May 30, 2017 - 09:00 AM |
Tagged: toshiba, ssd, ocz, NVMe, nand, M.2, computex 2017, BiCS, 64-Layer

Last night we saw WD launch the first client SSDs with 64-layer NAND Flash, but recall that WD/SanDisk is in partnership with Toshiba to produce this new gen 3 BiCS memory, which means Toshiba is also launching their own product wrapped around this new high-density flash:

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Enter the Toshiba XG5. It is certainly coming on strong here, as evidenced by the specs:

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Unlike the WD/SanDisk launch, the BiCS flash on this Toshiba variant sits behind an NVMe SSD controller, with stated read speeds at 3GB/s and writes just over 2 GB/s. We don't yet have random performance figures, but we expect it to certainly be no slouch given the expected performance of this newest generation of flash memory. Let's take a quick look at some of the high points there:

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Alright, so we have the typical things you'd expect, like better power efficiency and higher endurance, but there is a significant entry there under the performance category - 1-shot, full sequence programming. This is a big deal, since writing to flash memory is typically done in stages, with successive program cycles nudging cell voltages closer to their targets with each pass. This takes time and is one of the main things holding back the write speeds of NAND flash. This new BiCS is claimed to be able to successfully write in a single program cycle, which should translate to noticeable improvements in write latency.

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Another thing helping with writes is that the XG5 will have its BiCS flash operating in a hybrid mode, meaning these are TLC SSDs with an SLC cache. We do not have confirmed cache sizes to report, but it's a safe bet that they will be similar to competing products.

We don't yet have pricing info, but we do know that the initial capacity offerings will start with 256GB, 512GB, and 1TB offerings. The XG5 is launching in the OEM channel in the second half of 2017. While this one is an OEM product, remember that OCZ is Toshiba's brand for client SSDs, so there's a possibility we may see a retail variant appear under that name in the future.

Press blast after the break.

Source: Toshiba

FMS 2016: Samsung To Announce 64-Layer 4th Gen V-NAND, 32TB 2.5" SSD

Subject: Storage | August 10, 2016 - 02:00 PM |
Tagged: 2.5, V-NAND, ssd, Samsung, nand, FMS 2016, FMS, flash, 64-Layer, 32TB, SAS, datacenter

At a huge press event like Flash Memory Summit, being in the right place at the right time (and with the right camera), matters greatly. I'll just let a picture say a thousand words for me here:

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..now this picture has been corrected for extreme parallax and was taken in far from ideal conditions, but you get the point. Samsung's keynote is coming up later today, and I have a hunch this will be a big part of what they present. We did know 64-Layer was coming, as it was mentioned in Samsung's last earnings announcement, but confirmation is nice.

*edit* now that the press conference has taken place, here are a few relevant slides:

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With 48-Layer V-NAND announced last year (and still rolling out), it's good to see Samsung pushing hard into higher capacity dies. 64-Layer enables 512Gbits (64GB) per die, and 100MB/s per die maximum throughput means even lower capacity SSDs should offer impressive sequentials.

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Samsung 48-Layer V-NAND. Pic courtesy of TechInsights.

64-Layer is Samsung's 4th generation of V-NAND. We've seen 48-Layer and 32-Layer, but few know that 24-Layer was a thing (but was mainly in limited enterprise parts).

We will know more shortly, but for now, dream of even higher capacity SSDs :)

*edit* and this just happened:

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*additional edit* - here's a better picture taken after the keynote:

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The 32TB model in their 2.5" form factor displaces last years 16TB model. The drive itself is essentially identical, but the flash packages now contain 64-layer dies, doubling the available capacity of the device.