Introduction, Specifications and Packaging
Today Intel is launching a new line of client SSDs - the SSD 545S Series. These are simple, 2.5" SATA parts that aim to offer good performance at an economical price point. Low-cost SSDs is not typically Intel's strong suit, mainly because they are extremely rigorous on their design and testing, but the ramping up of IMFT 3D NAND, now entering its second generation stacked to 64-layers, should finally help them get the cost/GB down to levels previously enjoyed by other manufacturers.
Intel and Micron jointly announced 3D NAND just over two years ago, and a year ago we talked about the next IMFT capacity bump coming as a 'double' move. Well, that's only partially happening today. The 545S line will carry the new IMFT 64-layer flash, but the capacity per die remains the same 256Gbit (32GB) as the previous generation parts. The dies will be smaller, meaning more can fit on a wafer, which drives down production costs, but the larger 512Gbit dies won't be coming until later on (and in a different product line - Intel told us they do not intend to mix die types within the same lines as we've seen Samsung do in the past).
There are no surprises here, though I am happy to see a 'sustained sequential performance' specification stated by an SSD maker, and I'm happier to see Intel claiming such a high figure for sustained writes (implying this is the TLC writing speed as the SLC cache would be exhausted in sustained writes).
I'm also happy to see sensical endurance specs for once. We've previously seen oddly non-scaling figures in prior SSD releases from multiple companies. Clearly stating a specific TBW 'per 128GB' makes a lot of sense here, and the number itself isn't that bad, either.
Simplified packaging from Intel here, apparently to help further reduce shipping costs.
Subject: Storage | May 31, 2016 - 03:38 PM | Allyn Malventano
Tagged: TurboWrite, Samsung, PM971-NVMe, BGA, 512GB, 48-layer, 32GB, 256Gbit
Have you ever checked out one of those laptops with the soldered-on eMMC SSD, where the manufacturer was basically checking the 'SSD' box for forgetting the 'Performance' box entirely? What if I told you that it was possible to fit an entire PCIe NVMe SSD with performance comparable to a 950 Pro into a package similar to those eMMC parts?
Subject: Storage | May 27, 2016 - 02:42 PM | Jeremy Hellstrom
Tagged: TSV, toshiba, ssd, revodrive, RD400, pcie, ocz, NVMe, M.2, HHHL, 512GB, 2280, 15nm
If you somehow felt that there was a test that Al missed while reviewing the OCZ RD400 NVMe SSD, then you have a chance for a second look. There are several benchmarks which The SSD Review ran which were not covered and they have a different way of displaying data such as latency but the end results are the same, this drive is up there with the Samsung 950 Pro and Intel 750 Series. Read all about it here.
"With specs that rival the Samsung 950 Pro, a capacity point that nips at the heels of the Intel 750's largest model, and competitive MSRPs, the OCZ RD400 is out for blood. Read on to learn more about this latest enthusiast class NVMe SSD and see how it competes with the best of the best!"
Here are some more Storage reviews from around the web:
- Toshiba OCZ RD400 NVMe PCIe SSD 512GB @ Kitguru
- OCZ Trion 150 480GB SSD Review @ OCC
- Mushkin Atom 128GB USB 3.0 Flash Drive Review @ NikKTech
- Kingston DataTraveler 4000 G2 64GB Encrypted USB Drive Review @ OCC
- Asustor AS6104T 4-bay NAS @ Kitguru
- Thecus N5810 PRO NAS @ Kitguru
Introduction, Specifications and Packaging
The OCZ RevoDrive has been around for a good long while. We looked at the first ever RevoDrive back in 2010. It was a bold move for the time, as PCIe SSDs were both rare and very expensive at that time. OCZ's innovation was to implement a new VCA RAID controller which kept latencies low and properly scaled with increased Queue Depth. OCZ got a lot of use out of this formula, later expanding to the RevoDrive 3 x2 which expanded to four parallel SSDs, all the way to the enterprise Z-Drive R4 which further expanded that out to eight RAIDed SSDs.
OCZ's RevoDrive lineup circa 2011.
The latter was a monster of an SSD both in physical size and storage capacity. Its performance was also impressive given that it launched five years ago. After being acquired by Toshiba, OCZ re-spun the old VCA-driven SSD one last time in the form of a RevoDrive 350, but it was the same old formula and high-latency SandForce controllers (updated with in-house Toshiba flash). The RevoDrive line needed to ditch that dated tech and move into the world of NVMe, and today it has!
Here is the new 'Toshiba OCZ RD400', branded as such under the recent rebadging that took place on OCZ's site. The Trion 150 and Vertex 180 have also been relabeled as TR150 and VT180. This new RD400 has some significant changes over the previous iterations of that line. The big one is that it is now a lean M.2 part which can come on/with an optional adapter card for those not having an available M.2 slot.
Subject: Storage | February 14, 2016 - 02:51 PM | Allyn Malventano
Tagged: vnand, ssd, Samsung, nand, micron, Intel, imft, 768Gb, 512GB, 3d nand, 384Gb, 32 Layer, 256GB
You may have seen a wave of Micron 3D NAND news posts these past few days, and while many are repeating the 11-month old news with talks of 10TB/3.5TB on a 2.5"/M.2 form factor SSDs, I'm here to dive into the bigger implications of what the upcoming (and future) generation of Intel / Micron flash will mean for SSD performance and pricing.
Remember that with the way these capacity increases are going, the only way to get a high performance and high capacity SSD on-the-cheap in the future will be to actually get those higher capacity models. With such a large per-die capacity, smaller SSDs (like 128GB / 256GB) will suffer significantly slower write speeds. Taking this upcoming Micron flash as an example, a 128GB SSD will contain only four flash memory dies, and as I wrote about back in 2014, such an SSD would likely see HDD-level sequential write speeds of 160MB/sec. Other SSD manufacturers already recognize this issue and are taking steps to correct it. At Storage Visions 2016, Samsung briefed me on the upcoming SSD 750 Series that will use planar 16nm NAND to produce 120GB and 250GB capacities. The smaller die capacities of these models will enable respectable write performance and will also enable them to discontinue their 120GB 850 EVO as they transition that line to higher capacity 48-layer VNAND. Getting back to this Micron announcement, we have some new info that bears analysis, and that pertains to the now announced page and block size:
256Gb MLC: 16KB Page / 16MB Block / 1024 Pages per Block
384Gb TLC: 16KB Page / 24MB Block / 1536 Pages per Block
To understand what these numbers mean, using the MLC line above, imagine a 16MB CD-RW (Block) that can write 1024 individual 16KB 'sessions' (Page). Each 16KB can be added individually over time, and just like how files on a CD-RW could be modified by writing a new copy in the remaining space, flash can do so by writing a new Page and ignoring the out of date copy. Where the rub comes in is when that CD-RW (Block) is completely full. The process at this point is very similar actually, in that the Block must be completely emptied before the erase command (which wipes the entire Block) is issued. The data has to go somewhere, which typically means writing to empty blocks elsewhere on the SSD (and in worst case scenarios, those too may need clearing before that is possible), and this moving and erasing takes time for the die to accomplish. Just like how wiping a CD-RW took a much longer than writing a single file to it, erasing a Block takes typically 3-4x as much time as it does to program a page.
With that explained, of significance here are the growing page and block sizes in this higher capacity flash. Modern OS file systems have a minimum bulk access size of 4KB, and Windows versions since Vista align their partitions by rounding up to the next 2MB increment from the start of the disk. These changes are what enabled HDDs to transition to Advanced Format, which made data storage more efficient by bringing the increment up from the 512 Byte sector up to 4KB. While most storage devices still use 512B addressing, it is assumed that 4KB should be the minimum random access seen most of the time. Wrapping this all together, the Page size (minimum read or write) is 16KB for this new flash, and that is 4x the accepted 4KB minimum OS transfer size. This means that power users heavy on their page file, or running VMs, or any other random-write-heavy operations being performed over time will have a more amplified effect of wear of this flash. That additional shuffling of data that must take place for each 4KB write translates to lower host random write speeds when compared to lower capacity flash that has smaller Page sizes closer to that 4KB figure.
A rendition of 3D IMFT Floating Gate flash, with inset pulling back some of the tunnel oxide layer to show the location of the floating gate. Pic courtesy Schiltron.
Fortunately for Micron, their choice to carry Floating Gate technology into their 3D flash has netted them some impressive endurance benefits over competing Charge Trap Flash. One such benefit is a claimed 30,000 P/E (Program / Erase) cycle endurance rating. Planar NAND had dropped to the 3,000 range at its lowest shrinks, mainly because there was such a small channel which could only store so few electrons, amplifying the (negative) effects of electron leakage. Even back in the 50nm days, MLC ran at ~10,000 cycle endurance, so 30,000 is no small feat here. The key is that by using that same Floating Gate tech so good at controlling leakage for planar NAND on a new 3D channel that can store way more electrons enables excellent endurance that may actually exceed Samsung's Charge Trap Flash equipped 3D VNAND. This should effectively negate the endurance hit on the larger Page sizes discussed above, but the potential small random write performance hit still stands, with a possible remedy being to crank up the Over-Provisioning of SSDs (AKA throwing flash at the problem). Higher OP means less active pages per block and a reduction in the data shuffling forced by smaller writes.
A 25nm flash memory die. Note the support logic (CMOS) along the upper left edge.
One final thing helping out Micron here is that their Floating Gate design also enables a shift of 75% of the CMOS circuitry to a layer *underneath* the flash storage array. This logic is typically part of what you see 'off to the side' of a flash memory die. Layering CMOS logic in such a way is likely thanks to Intel's partnership and CPU development knowledge. Moving this support circuitry to the bottom layer of the die makes for less area per die dedicated to non-storage, more dies per wafer, and ultimately lower cost per chip/GB.
Samsung's Charge Trap Flash, shown in both planar and 3D VNAND forms.
One final thing before we go. If we know anything about how the Intel / Micron duo function, it is that once they get that freight train rolling, it leads to relatively rapid advances. In this case, the changeover to 3D has taken them a while to perfect, but once production gains steam, we can expect to see some *big* advances. Since Samsung launched their 3D VNAND their gains have been mostly iterative in nature (24, 32, and most recently 48). I'm not yet at liberty to say how the second generation of IMFT 3D NAND will achieve it, but I can say that it appears the next iteration after this 32-layer 256Gb (MLC) /384Gb (TLC) per die will *double* to 512Gb/768Gb (you are free to do the math on what that means for layer count). Remember back in the day where Intel launched new SSDs at a fraction of the cost/GB of the previous generation? That might just be happening again within the next year or two.
Subject: Storage | September 22, 2015 - 02:39 AM | Allyn Malventano
Tagged: vnand, V-NAND, ssd, Samsung, pcie, NVMe, M.2 2280, M.2, 950 PRO, 512GB, 256GB
Samsung’s new product launching will be called the 950 PRO. This will be an M.2 2280 form factor product running at PCIe 3.0 x4. Equipped with Samsung’s 32-layer V-NAND and using the NVMe protocol enabled by a new UBX controller, the 950 PRO will be capable of up to an impressive 300,000 random read IOPS. Random writes come in at 110,000 IOPS and sequential throughputs are expected to be 2.5 GB/sec reads and 1.5 GB/sec for writes. Available capacities will be 256GB and 512GB.
- 256GB - $199.99 ($0.78/GB)
- 512GB - $349.99 ($0.68/GB)
- 1TB - (early next year with the switch to 48-layer V-NAND)
The 950 PRO will be shipping with a 5-year warranty rated at 200 terabytes written for the 256GB model and 400 TBW for the 512GB. That works out to just over 100GB per day for both capacities.
These hit retail in October and we currently have samples in hand for testing.
(for those curious, both capacities only have components on the front side of the PCB)
Given that we are anticipating a launch of the Samsung 850 EVO very shortly, it is a good time to back fill on the complete performance picture of the 850 Pro series. We have done several full capacity roundups of various SSD models over the past months, and the common theme with all of them is that as the die count is reduced in lower capacity models, so is the parallelism that can be achieved. This effect varies based on what type of flash memory die is used, but the end result is mostly an apparent reduction in write performance. Fueling this issue is the increase in flash memory die capacity over time.
There are two different ways to counteract the effects of write speed reductions caused by larger capacity / fewer dies:
- Reduce die capacity.
- Increase write performance per die.
Recently there has been a trend towards *lower* capacity dies. Micron makes their 16nm flash in both 128Gbit and 64Gbit. Shifting back towards the 64Gbit dies in lower capacity SSD models helps them keep the die count up, increasing overall parallelism, and therefore keeping write speeds and random IO performance relatively high.
Introduction, Specifications and Packaging
It seems a lot of folks have been incorporating Silicon Motion's SM2246EN controller into their product lines. We first reviewed the Angelbird SSD wrk, but only in a 512GB capacity. We then reviewed a pair of Corsair Force LX's (256GB and 512GB). ADATA has joined the club with their new Premier SP610 product line, and today we are going to take a look at all available capacities of this new model:
It's fortunate that ADATA was able to sample us a full capacity spread, as this will let us evaluate all shipping SSD capacites that exist for the Silicon Motion SM2246EN controller.
Subject: General Tech, Storage | September 12, 2014 - 04:08 PM | Scott Michaud
Tagged: sandisk, sdxc, sdhc, sd card, 512GB
Assuming your camera, card reader, or other device fully conforms to the SDXC standard, Sandisk has developed a half-terabyte (512GB) memory card. Beyond being gigantic, it can be read at up to 95 MB/s and written at up to 90 MB/s, which should be enough to stream 4K video. Sandisk claims that it is temperature proof, shock proof, water proof, and x-ray proof. It also comes with a lifetime warranty and "RescuePRO Deluxe" recovery software but, honestly, I expect people would just use PhotoRec or something.
It should be noted that the SDXC standard covers memory cards up to 2TB so it will probably not be too long before we see another standard get ratified. What is next? SDUC? SDYC? SDALLTHEC? Blah! This is why IEEE assigns names sequentially.
The SanDisk Extreme PRO UHS-I SDHC/SDXC 512GB memory card should be available now, although I cannot yet find them online, for $799.99 MSRP.
Introduction, Specifications and Packaging
We first looked at the Silicon Motion 2246EN controller in our Angelbird SSD wrk review. In that review, we noted the highest sequential performance seen in any SATA SSD reviewed to date. Eager to expand our testing to include additional vendors and capacities, our next review touching on this controller is the Corsair Force LX series of SSDs. The Force LX Series is available in 128GB, 256GB, and 512GB capacities, and today we will look at the 256GB and 512GB iterations of this line: