FMS 2017: Samsung Announces QLC V-NAND, 16TB NGSFF SSD, Z-SSD V2, Key Value

Subject: Storage, Shows and Expos | August 8, 2017 - 05:37 PM |
Tagged: z-ssd, vnand, V-NAND, Samsung, QLC, FMS 2017, 64-Layer, 3d, 32TB, 1Tbit

As is typically the case for Flash Memory Summit, the Samsung keynote was chock full of goodies:

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Samsung kicked off by stating there are a good 5 years of revisions left in store for their V-NAND line, each with a corresponding increase in speed and capacity.

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While V-NAND V4 was 64-layer TLC, V5 is a move to QLC, bringing per die capacity to 1Tbit (128 GB per die).

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If you were to stack 32 of these new V5 dies per package, and do so in a large enough 2.5" housing, that brings the maximum capacity of such a device to a whopping 128TB!

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Samsung also discussed a V2 of their Z-NAND, moving from SLC to MLC while only adding 2-3 us of latency per request. Z-NAND is basically a quicker version of NAND flash designed to compete with 3D XPoint.

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M.2 SSDs started life with the working title of NGFF. Fed up with the limitations of this client-intended form factor for the enterprise, Samsung is pushing a slightly larger NGSFF form factor that supports higher capacities per device. Samsung claimed a PM983 NGSFF SSD will hold 16TB, a 1U chassis full of the same 576TB, and a 2U chassis pushing that figure to 1.15PB.

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Last up is 'Key Value'. This approach allows the flash to be accessed more directly by the application layer, enabling more efficient use of the flash and therefore higher overall performance.

There were more points brought up that we will be covering later on, but for now here is the full press release that went out during the keynote: (after the break)

FMS 2016: Samsung To Announce 64-Layer 4th Gen V-NAND, 32TB 2.5" SSD

Subject: Storage | August 10, 2016 - 02:00 PM |
Tagged: 2.5, V-NAND, ssd, Samsung, nand, FMS 2016, FMS, flash, 64-Layer, 32TB, SAS, datacenter

At a huge press event like Flash Memory Summit, being in the right place at the right time (and with the right camera), matters greatly. I'll just let a picture say a thousand words for me here:

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..now this picture has been corrected for extreme parallax and was taken in far from ideal conditions, but you get the point. Samsung's keynote is coming up later today, and I have a hunch this will be a big part of what they present. We did know 64-Layer was coming, as it was mentioned in Samsung's last earnings announcement, but confirmation is nice.

*edit* now that the press conference has taken place, here are a few relevant slides:

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With 48-Layer V-NAND announced last year (and still rolling out), it's good to see Samsung pushing hard into higher capacity dies. 64-Layer enables 512Gbits (64GB) per die, and 100MB/s per die maximum throughput means even lower capacity SSDs should offer impressive sequentials.

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Samsung 48-Layer V-NAND. Pic courtesy of TechInsights.

64-Layer is Samsung's 4th generation of V-NAND. We've seen 48-Layer and 32-Layer, but few know that 24-Layer was a thing (but was mainly in limited enterprise parts).

We will know more shortly, but for now, dream of even higher capacity SSDs :)

*edit* and this just happened:

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*additional edit* - here's a better picture taken after the keynote:

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The 32TB model in their 2.5" form factor displaces last years 16TB model. The drive itself is essentially identical, but the flash packages now contain 64-layer dies, doubling the available capacity of the device.