Samsung Crams Entire 512GB NVMe SSD Into Single BGA Chip Package

Subject: Storage | May 31, 2016 - 03:38 PM |
Tagged: TurboWrite, Samsung, PM971-NVMe, BGA, 512GB, 48-layer, 32GB, 256Gbit

Have you ever checked out one of those laptops with the soldered-on eMMC SSD, where the manufacturer was basically checking the 'SSD' box for forgetting the 'Performance' box entirely? What if I told you that it was possible to fit an entire PCIe NVMe SSD with performance comparable to a 950 Pro into a package similar to those eMMC parts?

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Source: Samsung

FMS 2015: *UPDATED* Samsung Adds Layers to its 3D VNAND, Doubling Capacity While Reducing Power Consumption

Subject: Storage | August 11, 2015 - 04:39 PM |
Tagged: vnand, tlc, Samsung, FMS 2015, 48-layer, 32GB, 32-layer, 256Gbit

FMS 2015: Samsung Adds Layers to its 3D VNAND, Doubling Capacity While Reducing Power Consumption

Samsung recently added 2TB capacity parts to their 850 EVO SATA SSDs, but today’s announcement may double that. Today at Flash Memory Summit, Samsung has announced a new iteration on their 3D VNAND technology.

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Cross section of Samsung 32-layer VNAND. (TechInsights)

The announcement is a new TLC 3D VNAND (the type present in the 850 EVO Series). The new parts consist of an updated die with the following improvements:

  • 48 layer VNAND - up from 32 layers of the previous generation
  • 256Gbit (32GB) capacity - up from 128Gbit (16GB) capacity of 32-layer VNAND
  • 30% reduction in power consumption over 32-layer VNAND

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Samsung’s new 48-layer VNAND.

I suspected Samsung would go this route in order to compete with the recent announcements from Intel/Micron and SanDisk. Larger die capacities may not be the best thing for keeping performance high in smaller capacity SSDs (a higher number of smaller capacity dies helps there), but it is definitely a good capability to have since higher capacity per die translates to more efficient flash die production.

The Samsung keynote is at noon today (Pacific), and I will update this piece with any photos relevant to the announcement after that keynote.

*UPDATE*

I just got out of the Samsung keynote. There were some additional slides with data relevant to this post:

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This image simply shows the additional vertical stacking, but adds that Samsung has this new flash in production right now.

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The new higher capacity dies enable 1.4x greater density per wafer (realize that this does not mean more dies per wafer, as the image incorrectly suggests).

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The power consumption improvements (right) were in the press release, however the speed improvements (left) were not. A 2x improvement in per-die speeds means that Samsung should not see a performance hit if they migrate their existing 128Gbit TLC VNAND SSDs over to these new 256Gbit parts. Speaking of which...

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Not only is this new VNAND being produced *this month*, Samsung is retrofitting their 850 EVO line with the new parts. Again, we expect no performance delta but will likely retest these new versions just to double check for any outliers.

There was some more great info from the keynote, but that will appear in another post later today.

Samsung’s press blast appears after the break.

Source: Samsung