GLOBALFOUNDRIES Technical Conference Releases

Subject: General Tech | September 20, 2017 - 09:44 PM |
Tagged: GLOBALFOUNDRIES, FinFET, FD-SOI, 12nm, 14nm, 14nm+, 22FDX, 28FDX, 12FDX, amd, Vega, ryzen

The day after Intel had its Technology and Manufacturing expo in China, GLOBALFOUNDRIES kicks off their own version of the event and has made a significant number of announcements concerning upcoming and next generation process technologies. GF (GLOBALFOUNDRIES) had been the manufacturing arm of AMD until it was spun off as its own entity in 2009. Since then GF has been open to providing fabless semiconductor firms a viable alternative to TSMC and other foundries. Their current 14nm process is licensed from Samsung, as GF had some significant issues getting their own version of that technology into production. GF looks to be moving past their process hiccups in getting to FinFET technologies as well as offering other more unique process nodes that will serve upcoming mobile technologies very well.
 
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The big announcement today was the existence of the 12LP process. This is a "12 nm" process that looks to be based off of their previous 14nm work. It is a highly optimized variant that offers around 15% better density and 10% better performance than current 14/16nm processes from competing firms. Some time back GF announced that it would be skipping the 10nm node and going directly to 7nm, but it seems that market forces have pushed them to further optimize 14nm and offer another step.  Regular process improvement cadences are important to fabless partners as they lay out their roadmaps for future products.
 
12FP is also on track to be Automotive Grade 2 Certified by Q4 2017, which opens it up to a variety of automotive applications. Self-driving cars are the hot topic these days and it appears as though GF will be working with multiple manufacturers including Tesla. The process also has an RF component that can be utilized for those designs.
 
There had been some questions before this about what GF would do between 14nm and their expected 7nm offering. AMD had previously shown a roadmap with the first generation Zen being offered on 14nm and a rather nebulous sounding 14nm+ process. We now know that 12LP is going to be the process that AMD leverages for Zen and Vega refreshes next year. GF is opening up risk production in 1H 2018 for early adopters. This typically means that tuning is still going on with the process, and wafer agreements tend to not hinge on "per good die". Essentially, just as the wording suggest, the monetary risks of production fall more on the partner rather than the foundry. I would expect the Zen/Vega refreshes to start rolling out mid-Summer 2018 if all goes well with 12LP.
 
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RF is getting a lot of attention these days. In the past I had talked quite a bit about FD-SOI and the slow adoption of that technology. In the 5G world that we are heading to, RF is becoming far more important. Currently GF has their 28FDX and 22FDX processes which utilize FD-SOI (Fully Depleted Silicon On Insulator). 22FDX is a dual purpose node that can handle both low-leakage ASICs as well as RF enabled products (think cell-phone modems). GF has also announced a new RF centric process node called 8SW SOI. This is a 300mm wafer based technology at Fab 10 located in East Fishkill, NY. This was once an IBM fab, but was eventually "given" to GF for a variety of reasons. The East Fishkill campus is also a center for testing and advanced process development.
 
22FDX is not limited to ASIC and RF production. GF is announcing that it is offering eMRAM (embedded magnetoresistive non-volatile memory) support. GF claims that ic an retain data through a 260C solder reflow while retaining data for more than 10 years at 125C. These products were developed through a partnership with Everspin Technologies. 1Gb DDR MRAM chips have been sampled and 256Mb DDR MRAM chips are currently available through Everspin. This technology is not limited to standalone chips and can be integrated into SOC designs utilizing eFlash and SRAM interface options.
 
GLOBALFOUNDRIES has had a rocky start since it was spun off from AMD. Due to aggressive financing from multiple sources it has acquired other pure play foundries and garnered loyal partners like AMD who have kept revenue flowing. If GF can execute on these new technologies they will be on a far more even standing with TSMC and attract new customers. GF has the fab space to handle a lot of wafers, but these above mentioned processes could be some of their first truly breakthrough products that differentiates itself from the competition.

GlobalFoundries to Continue FD-SOI Tech, Adds 12nm “12FDX” Node To Roadmap

Subject: Processors | September 13, 2016 - 06:51 PM |
Tagged: GLOBALFOUNDRIES, FD-SOI, 12FDX, process technology

In addition to the company’s efforts to get its own next generation FinFET process technology up and running, GlobalFoundries announced that will continue to pursue FD-SOI process technology with the addition of a 12nm FD-SOI (FDX in GlobalFoundries parlance) node to its roadmap with a slated release of 2019 at the earliest.

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FD-SOI stands for Fully Depleted Silicon On Insulator and is a planar process technology that uses a thin insulator on top of the base silicon which is then covered by a very thin layer of silicon that is used as the transistor channel. The promise of FD-SOI is that it offers the performance of a FinFET node with lower power consumption and cost than other bulk processes. While the substrate is more expensive with FD-SOI, it uses 50% of the lithography layers and companies can take advantage of reportedly easy-to-implement body biasing to design a single chip that can fulfill multiple products and roles. For example, in the case of 22FDX – which should start rolling out towards the end of this year – GlobalFoundries claims that it offers the performance of 14 FinFET at the 28nm bulk pricing. 22FDX is actually a 14nm front end (FEOL) and 28nm back end of line (BEOL) combined. Notably, it purportedly uses 70% lower power than 28nm HKMG.

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A GloFo 22nm FD-SOI "22FDX" transistor.

The FD-SOI design offers lower static leakage and allows chip makers to use body biasing (where substrate is polarized) to balance performance and leakage. Forward Body Biasing allows the transistor to switch faster and/or operate at much lower voltages. On the other hand, Reverse Body Biasing further reduces leakage and frequency to improves energy efficiency. Dynamic Body Biasing (video link) allows for things like turbo modes whereby increasing voltage to the back gate can increase transistor switching speed or reducing voltage can reduce switching speeds and leakage. For a process technology that is aimed at battery powered wearables, mobile devices, and various Internet of Things products, energy efficiency and being able to balance performance and power depending on what is needed is important.

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22FDX offers body biasing.

While the process node numbers are not as interesting as the news that FD-SOI will continue itself (thanks to marketing mucking up things heh), GlobalFoundries did share that 12FDX (12nm FD-SOI) will be a true full node shrink that will offer the performance of 10nm FinFET (presumably its own future FinFET tech though they do not specify) with better power characteristics and lower cost than 16nm FinFET. I am not sure if GlobalFoundries is using theoretical numbers or compared it to TSMC’s process here since they do not have their own 16nm FinFET process. Further, 12FDX will feature 15% higher performance and up to 50% lower power consumption that today’s FinFET technologies. The future process is aimed at the “cost sensitive mobile market” that includes IoT, automotive (entertainment and AI), mobile, and networking. FD-SOI is reportedly well suited for processors that combine both digital and analog (RF) elements as well.

Following the roll out of 22FDX GlobalFoundries will be preparing its Fab 1 facility in Dresden, Germany for the 12nm FD-SOI (12FDX) process. The new process is slated to begin tapping out products in early 2019 which should mean products using chips will hit the market in 2020.

The news is interesting because it indicates that there is still interest and research/development being made on FD-SOI and GlobalFoundries is the first company to talk about next generation process plans. Samsung and STMicroelectronics also support FD-SOI but have not announced their future plans yet.

If I had to guess, Samsung will be the next company to talk about future FD-SOI as the company continues to offer both FinFET and FD-SOI to its customers though they certainly do not talk as much about the latter. What are your thoughts on FD-SOI and its place in the market?

Also read: FD-SOI Expands, But Is It Disruptive? @ EETimes

Source: Tech Report