Intel and Micron Sample Industry's First 50 Nanometer NAND Flash Memory Devices

Subject: Storage | July 25, 2006 - 03:13 PM |
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BOISE, Idaho, and SANTA CLARA, Calif.,
July 25, 2006
— Demonstrating their commitment to move quickly up the
technology leadership curve, Micron Technology, Inc., and Intel
Corporation today announced they are sampling the industry's first NAND
flash memory built on industry-leading 50 nanometer (nm) process
technology. The samples were manufactured through IM Flash
Technologies, a joint development and manufacturing venture from Micron
and Intel. Both companies are sampling 4 gigabit (Gb) devices now, with
plans to mass produce a range of densities on the 50nm node in 2007.

This move to 50nm process technology
will enable Intel and Micron to meet the growing demand for higher
density NAND flash across a range of computing and consumer electronics
applications such as digital music players, removable storage and
handheld communications devices. According to industry research
forecasts, the NAND market segment is estimated to reach $13 to $16
billion in 2006 and grow to approximately $25 to $30 billion by 2010.

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