Intel And Micron Sampling Industry-Leading Multi-Level Cell NAND Flash Memory
Subject: Memory | April 25, 2007 - 03:03 PM | Jeremy Hellstrom
SANTA CLARA, Calif. and BOISE, Idaho, April 25, 2007 — Intel Corporation and Micron Technology, Inc., today announced they are sampling industry-leading 50 nanometer (nm) multi-level cell (MLC) NAND flash memory manufactured by their NAND flash memory joint venture, IM Flash Technologies.
The new MLC NAND flash memory components feature a world-class die and cell size ideally suited for use in today's computing and consumer electronics devices that are increasingly smaller and more efficient themselves. The 50nm MLC technology, sampling at a 16 gigabit (Gb) die density, complements the previously announced 50nm single-level cell (SLC) products that the companies are shipping today at a 4 Gb die density.