Intel steps out of line to show off 3D transistors

Subject: General Tech | August 19, 2011 - 08:40 AM |
Tagged: Intel, transistor, tri-gate, Ivy Bridge

Back in May Intel released an interesting video showing off Tri-Gate technology, which brings a third dimension to transistors.  That will allow transitions to happen with much less voltage, reducing power requirements and heat generation and allowing for increases in transistor density.  Ivy Bridge was suggested as the likely suspect for Intel to first utilize Tri-Gates and over at SemiAccurate you can see the proof as well as the process.  Intel is claiming a 37% performance increase at low voltages or about half the power usage if you keep the same performance.  Read on to see the difference between FINFets that will be in the competitions chips and the Intel-only three dimensional transistors.

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"Intel is set to become the first company to mass produce non-planar transistors with their upcoming 22nm process. Others are talking about FD-SOI, FINFets, and several related structures, but only Intel is set to produce anything in the near future.

There has been a lot of talk about what Intel is doing, and a lot of incomplete or incorrect information put forward from many different sources. What Intel is making is called Tri-Gate transistors, something that is a radical departure from planar ’2D’ transistors, and distinct from FINFets in a very important way."

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Source: SemiAccurate
August 21, 2011 | 09:47 PM - Posted by Anonymous (not verified)

I hope they can make them smaller. They won't be able to fit many if they're as big as the ones in the picture.

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