Intel And STMicroelectronics Announce Common Memory Subsystem To Lower Costs For Cell Phone Makers

Subject: Cases and Cooling | December 5, 2005 - 01:45 PM |
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GENEVA and SANTA CLARA, Calif., Dec. 5, 2005 — STMicroelectronics and Intel Corporation today announced a common flash memory subsystem to lower development costs for handset OEMs and enable them to get to market faster with feature-rich phones. In an effort to simplify handset memory design, the two companies will provide hardware- and software-compatible memory products based on common specifications. As a result, cell phone makers should see shorter development times and lower costs and will be able to transition quickly and cost effectively to the next-generation of NOR flash products from the two companies.


NOR flash is the memory technology of choice for the volume mainstream of the cellular-phone market segment. According to industry research firm iSuppli, 92.8 percent of the embedded flash memory shipping in handsets is NOR flash memory. Intel and ST provide more than 40 percent of the NOR flash memory in handsets today.


Today's move to create a 'second source' for leading NOR flash products and subsystems marks the first time that ST and Intel have worked together on common memory specifications. The first Multi-Level Cell (MLC) NOR products based on the common specifications are 512 Mbit devices independently designed and manufactured on industry-leading 90nm process technology. These products are now available from the two companies. The common subsystem specifications will also extend to 65nm MLC NOR technology and will focus on single-chip 1 Gb MLC NOR products.


The full press release is here.

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