STT-MRAM may first appear in Toshiba's phone chips
Subject: General Tech | December 12, 2012 - 01:33 PM | Jeremy Hellstrom
Tagged: toshiba, STT-MRAM, SRAM
Static random-access memory has been the standard memory used in cell phones and other hardware where having low power consumption is more important than speed. It may be on its way out as Toshiba has announced that they have developed prototype magentoresistive RAM which is more efficient that SRAM thanks to the fact that it is non-volatile and can essentially remain in a powered off state until it is accessed for a read or write command. They also feel that this new type of RAM will allow increased performance as well as a way to continue to reduce the process size below 30nm. The information they passed on to DigiTimes is based on a model as opposed to working silicon, so we are a ways away from seeing MRAM in cell phones, however Toshiba is quite confident in the accuracy of their simulation.
"Toshiba has announced the development of a prototype memory element for a spin transfer torque magnetoresistive random access memory (STT-MRAM). The new MRAM element achieves what the company claims is the world's lowest power consumption yet reported, indicating that it has the potential to surpass the power consumption efficiency of SRAM as cache memory."
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A*STAR is making a name for themselves in storage
Subject: General Tech | November 2, 2011 - 01:02 PM | Jeremy Hellstrom
Tagged: A*STAR, hdd, STT-MRAM
A*STAR Data Storage Institute was in the news two weeks ago with the results of their experiment of doping hard drive storage medium with salt allows a 6 fold increase in storage density thanks to much tighter sputtering of magnetic grains on the platter. They are back in the news with another development in a different kind of storage medium altogether. With Micron partnering in the development they are working on a new type of resistive RAM, which will bring speeds better than you can get with flash and in a non-volatile form. The technology is referred to as spin transfer torque magnetic random access memory or STT-MRAM. Drop by The Register for a look at what they are up to, as well as what the competition is working on to bring us the next generation of NAND.
"NAND suppliers and technology developers are anticipating this by developing follow-on technologies centred around the idea of non-volatile, resistive RAM (RRAM), which is faster to access than flash and has a longer working life. There are a variety of ways of altering the resistance of a memory cell and Micron is entering into a joint research and development agreement with Singapore's A*STAR Data Storage Institute (DSI) to develop spin transfer torque magnetic random access memory or STT-MRAM."
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