Subject: Storage | November 17, 2011 - 12:40 PM | Jeremy Hellstrom
Tagged: usb 2.0, usb 3.0, kingston, hyperx, flash
Fountain Valley, CA -- November 17, 2011 -- Kingston Digital, Inc., the Flash memory affiliate of Kingston Technology Company, Inc., the independent world leader in memory products, today announced the Kingston DataTraveler HyperX 3.0. The DataTraveler HyperX 3.0 is designed for enthusiasts and gamers, and features the fastest speeds and largest capacities that Kingston has to offer in a USB Flash drive.
Its high-speed eight-channel architecture provides USB 3.0 data transfer rates of up to 225MB/s read and 135MB/s write. Users can save time associated with opening, editing and copying large files and applications between devices. The fast write speeds also allow users to work on large files or applications directly from the USB 3.0 drive without performance lag.
"Enthusiasts have long known HyperX as the memory of choice for overclockers and power users who need the most performance from system memory," said Andrew Ewing, Flash memory business manager, Kingston. "The new DataTraveler HyperX 3.0 USB Flash drive continues this tradition. With the fastest speeds and largest capacity, this storage device is the perfect solution for users who require high performance and carry a lot of data."
The DataTraveler HyperX 3.0 is available in 64GB, 128GB and 256GB capacities. The 256GB capacity can store approximately 10 Blu-ray Discs (25GB each), 54 DVDs (4.7GB each), 48,640 MP3s (4MB each) or 13,473,684 Microsoft Word files pages with various formatting and basic graphics.
With a durable and sleek design, the Kingston DataTraveler HyperX 3.0 is a terrific portable storage solution for gamers, enthusiasts, early adopters and high-end consumers who require the best performance and highest capacities to carry their digital library. Faster speeds and higher capacities enable users to quickly store their digital files and keep it with them at all times, in HyperX style.
DataTraveler HyperX 3.0 features a metal and rubberized casing with a reinforced key ring hole for daily use. It allows users to keep it with them at all times, as it can be easily attached to a key ring or lanyard.
DataTraveler HyperX 3.0 is backed by a five-year warranty, 24/7 tech support and legendary Kingston reliability. For more information visit www.kingston.com.
Kingston DataTraveler HyperX 3.0 Features and Specifications:
- Capacities: 64GB, 128GB, 256GB
- USB 3.0: up to 225MB/s read and 135MB/s write
- USB 2.0: up to 30 MB/s read/write
- 8-Channel Architecture Backwards Compatible: with USB 2.0 and USB 1.1 ports
- Solid/rugged design: durable metal and rubberized casing provides increased protection
- ReadyBoost Support
- Dimensions: 2.952" x 0.916" x 0.626" (74.99mm x 23.29mm x 15.9mm)
- Operating Temperature: 32°F to 140°F (0°C to 60°C)
- Storage Temperature: -4°F to 185°F (-20°C to 85°C)
- Simple: just plug into any USB port
- Practical: durable casing with a solid lanyard loop
- Warranty: 5 Years
Subject: General Tech | October 20, 2011 - 11:35 AM | Jeremy Hellstrom
Tagged: Viking, ramdisk, DRAM to SLC, flash, super cap
Move over Fusion-io and RAMdisks with battery back up, Viking Technology has a surprise in store for you. Their DDR3 ArxCis-NV works as a standard DIMM in your machine, making installation and compatibility a snap. The difference is the super capacitor, available in a variety of sizes, which provides power long enough for the entire contents of the DIMM to be dumped to SLC flash for non-volatile storage in the case of a power outage or expected shut down. Once power is restored the contents of the SLC flash is dumped back to the DIMM and once again your storage media is back to running at DDR3 speeds. The slowest part of your storage will be the flash drive! If that sounds like something you'd like to know more about head to The Register.
"Viking Technology is a division of Sanmina-SCI, and its DDR3 ArxCis-NV is a DIMM that comes in 2, 4 and 8GB capacity points and operates at DRAM speed. It integrates into industry-standard x86 motherboards and functions in the host environment as a JEDEC standard DDR3 registered DIMM. If there is a power failure, or a host driven command, the ArxCis-NV will save all data in the DRAM to SLC (single-level cell) flash; upon power being restored, the data is written back to the DRAM ready for the system to access immediately following boot-up, provided there's sufficient operating system-level support for such a restore."
Here is some more Tech News from around the web:
- Major Chinese supplier halts rare earths production in attempt to boost prices @ Engadget
- Nvidia Tegra roadmap slips a year @ SemiAccurate
- Unbricking and upgrading an ASUS wl520 router @ Hack a Day
- Rosewill Wireless-N WiFi USB Adapter @ Benchmark Reviews
- ARM's Cortex A7: Bringing Cheaper Dual-Core & More Power Efficient High-End Devices @ AnandTech
- Can AMD survive Bulldozer's disappointing debut? @ Ars Technica
- Leaked Intel roadmap reveals PCIe flash kit @ The Register
- AMD taps Papermaster as CTO @ The Register
Subject: General Tech | September 28, 2011 - 01:02 PM | Jeremy Hellstrom
Tagged: ram, FeTRAM, low power, flash
There's a new type of Flash RAM looking to make its name on the street called FeTRAM, which sounds as interesting as the phase change memory that we've been hearing about. It is an improved version of Ferrous RAM, which is very fast and uses very low power but uses a destructive reading technique. The T in the new RAM stands for transistor, so instead of the charge on the memory cell being negated by a read, the transistor will hold onto the charge so that the data can be held long term. That spells the difference between a memory module good only for RAM and a module that can be used in an SSD. The Register points to an article citing a 99% reduction in power usage when compared to current flash memory technology.
"Nanotechnology boffins are exploring a new type of nonvolatile memory that not only has the potential of being faster than today's flash RAM, but also requires 99 per cent less energy.
Called ferroelectric transistor random access memory – FeTRAM, for short – the scheme is based on a new type of transistor that combines silicon nanowires with an organic ferroelectric polymer – P(VDF-TrFE) – that switches polarity when an electric field is applied to it."
Here is some more Tech News from around the web:
- Information explosion: how rapidly expanding storage spurs innovation @ Ars Technica
- Amazon Kindle Fire Surfaces @ Slashdot
- BM partners with Intel, Samsung and TSMC for fab research @ The Inquirer
- Lenovo, Compal snuggle up to build notebook plant @ The Register
Subject: General Tech | July 15, 2011 - 02:50 AM | Tim Verry
Tagged: linux, flash, Adobe
The announcement also briefly covers the improved security measures, specifically those that relate to GPU-acceleration. The new Stage 3D rendering API includes a new simple shader language dubbed AGAL (Adobe Graphics Assembly Language) that prohibits loops or functions inside shaders. Further, Adobe has added restrictions to the API to limit the number of calls per frame in an attempt to mitigate DDoS attacks.
The new desktop beta is available now for download. 64 bit Linux users rejoice, for the necessary evil that is Flash has returned to you.
Subject: Storage | April 27, 2011 - 10:06 PM | Allyn Malventano
Tagged: tlc, ssd, slc, ocz, mlc, flash
A while back, Intel and Micron jointly announced the beginnings of 20nm flash memory production, promising a 50% increase in die count per wafer (or a 50% reduction in per die production cost, depending on how you slice it). This shrink only did just that - shrink the die. Capacity remained at 64Gbit (8GB).
A few days ago IMFT also announced another way to shrink that die, but this time keeping with the now 'old' 25nm process. It turns out they have refined 25nm to the point where consumer-grade TLC flash can be produced. TLC is Triple-Level-Cell. While SLC (Single) holds 1 bit per cell, and MLC (Multi) holds two, TLC holds 3 bits per cell. Compared to the MLC 25nm dies, this gives a capacity increase without changing much else. IMFT, however, is happy with the 8GB 'sweet spot', so instead of jumping to a 12GB die of the same physical size, they are opting to instead shrink the current 25nm die to 131mm^2.
25nm TLC die, same 8GB capacity, but less area than the 25nm MLC die.
This gives Intel and Micron two options for ultimately reducing the price of flash - either by shrinking the process and getting more 8GB MLC dies out of a 20nm wafer, or by squeezing more bits into each cell of existing 25nm flash.
This is good stuff. Let's hope it gets even more SSD's into even more machines this holiday season.